JPS5599778A - Insulated-gate type field effect transistor - Google Patents

Insulated-gate type field effect transistor

Info

Publication number
JPS5599778A
JPS5599778A JP736679A JP736679A JPS5599778A JP S5599778 A JPS5599778 A JP S5599778A JP 736679 A JP736679 A JP 736679A JP 736679 A JP736679 A JP 736679A JP S5599778 A JPS5599778 A JP S5599778A
Authority
JP
Japan
Prior art keywords
layer
film
molybdenum
insulated
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP736679A
Other languages
Japanese (ja)
Inventor
Takashi Tomizawa
Koji Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP736679A priority Critical patent/JPS5599778A/en
Publication of JPS5599778A publication Critical patent/JPS5599778A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain high speed characteristics and make the device compact by directly connecting a gate electrode made of a molybdenum layer and the specified source-drain region by means of a polycrystalline silicon layer. CONSTITUTION:By using the conventional molybdenum gate MOS-FET process, molybdenum layer 24 and oxide film 23 are formed. Subsequently, polycrystalline silicon layer 25 is formed on the entire surface. Then, an n-type impurity is diffused through layer 25, and using oxide films 22 and 23 as masks, n-type source and drain regions 26a and 26b are formed. Next, silicon nitride film 27 is formed, and by oxidizing by using film 27 as a mask, oxidized part 28 is formed. Subsequently, film 27 is removed. Next, an insulating oxide film which insulates metal wiring layer 31 and layer 25 is formed. Then, by selectively removing film 29, a contact hole is formed, and then metal wiring layer 31 is formed.
JP736679A 1979-01-24 1979-01-24 Insulated-gate type field effect transistor Pending JPS5599778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP736679A JPS5599778A (en) 1979-01-24 1979-01-24 Insulated-gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP736679A JPS5599778A (en) 1979-01-24 1979-01-24 Insulated-gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5599778A true JPS5599778A (en) 1980-07-30

Family

ID=11663962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP736679A Pending JPS5599778A (en) 1979-01-24 1979-01-24 Insulated-gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5599778A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270822A (en) * 1985-05-25 1986-12-01 Sony Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5296873A (en) * 1976-06-26 1977-08-15 Tdk Corp Mos type field effect transistor and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5296873A (en) * 1976-06-26 1977-08-15 Tdk Corp Mos type field effect transistor and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270822A (en) * 1985-05-25 1986-12-01 Sony Corp Manufacture of semiconductor device

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