JPS5296873A - Mos type field effect transistor and its manufacture - Google Patents

Mos type field effect transistor and its manufacture

Info

Publication number
JPS5296873A
JPS5296873A JP7573276A JP7573276A JPS5296873A JP S5296873 A JPS5296873 A JP S5296873A JP 7573276 A JP7573276 A JP 7573276A JP 7573276 A JP7573276 A JP 7573276A JP S5296873 A JPS5296873 A JP S5296873A
Authority
JP
Japan
Prior art keywords
manufacture
field effect
effect transistor
type field
mos type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7573276A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP7573276A priority Critical patent/JPS5296873A/en
Publication of JPS5296873A publication Critical patent/JPS5296873A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enable MOS IC enabling multiple layer wiring without care of open wire, by self align system.
COPYRIGHT: (C)1977,JPO&Japio
JP7573276A 1976-06-26 1976-06-26 Mos type field effect transistor and its manufacture Pending JPS5296873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7573276A JPS5296873A (en) 1976-06-26 1976-06-26 Mos type field effect transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7573276A JPS5296873A (en) 1976-06-26 1976-06-26 Mos type field effect transistor and its manufacture

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP46000799 Division 1971-01-14 1971-01-14

Publications (1)

Publication Number Publication Date
JPS5296873A true JPS5296873A (en) 1977-08-15

Family

ID=13584726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7573276A Pending JPS5296873A (en) 1976-06-26 1976-06-26 Mos type field effect transistor and its manufacture

Country Status (1)

Country Link
JP (1) JPS5296873A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599779A (en) * 1979-01-24 1980-07-30 Siemens Ag Method of fabricating integrated mos circuit
JPS5599778A (en) * 1979-01-24 1980-07-30 Mitsubishi Electric Corp Insulated-gate type field effect transistor
JPS5650575A (en) * 1979-10-01 1981-05-07 Seiko Epson Corp Manufacture of semiconductor device
JPS5673473A (en) * 1979-11-06 1981-06-18 Yokogawa Hewlett Packard Ltd Manufacture of semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599779A (en) * 1979-01-24 1980-07-30 Siemens Ag Method of fabricating integrated mos circuit
JPS5599778A (en) * 1979-01-24 1980-07-30 Mitsubishi Electric Corp Insulated-gate type field effect transistor
JPS5650575A (en) * 1979-10-01 1981-05-07 Seiko Epson Corp Manufacture of semiconductor device
JPS5673473A (en) * 1979-11-06 1981-06-18 Yokogawa Hewlett Packard Ltd Manufacture of semiconductor element

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