JPS56100199A - Method and apparatus for manufacturing gallium antimony single crystal - Google Patents

Method and apparatus for manufacturing gallium antimony single crystal

Info

Publication number
JPS56100199A
JPS56100199A JP263780A JP263780A JPS56100199A JP S56100199 A JPS56100199 A JP S56100199A JP 263780 A JP263780 A JP 263780A JP 263780 A JP263780 A JP 263780A JP S56100199 A JPS56100199 A JP S56100199A
Authority
JP
Japan
Prior art keywords
melt
single crystal
crucible
growing
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP263780A
Other languages
Japanese (ja)
Other versions
JPS5759240B2 (en
Inventor
Akinori Katsui
Zeio Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP263780A priority Critical patent/JPS56100199A/en
Publication of JPS56100199A publication Critical patent/JPS56100199A/en
Publication of JPS5759240B2 publication Critical patent/JPS5759240B2/ja
Granted legal-status Critical Current

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Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To manufacture a Ga.Sb single crystal of high quality with high reproducibility by coating the surface of a Ga.Sb melt moved through a small hole with a B2O3 capsuling agent contg. added alkali metal fluoride and growing a single crystal.
CONSTITUTION: A Ga.Sb polycrystal in melting crucible 4 is melted by induction heating with heater 11 while feeding N2 gas of high purity to the manufacturing apparatus. Ga.Sb melt 14' is passed through small hole 10 to remove surface oxide 16 of melt 14', and it is dropped into crucible 7 for growing a single crystal. After moving all of melt 14' into crucible 7, crucible 4 is shifted with rotation, and heater 11 is lowered to heat crucible 7. Seed crystal 8 is then lowered, brought into contact with melt 14', and pulled up with rotation to grow single crystal 17. At this time, B2O3 melt 15' contg. one or more kinds of alkali metal fluorides added floats on the surface of melt 14' to prevent the oxidation of melt 14' and inhibit the evaporation of Sb, resulting in a remarkably reduced change in the composition of melt 14'.
COPYRIGHT: (C)1981,JPO&Japio
JP263780A 1980-01-16 1980-01-16 Method and apparatus for manufacturing gallium antimony single crystal Granted JPS56100199A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP263780A JPS56100199A (en) 1980-01-16 1980-01-16 Method and apparatus for manufacturing gallium antimony single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP263780A JPS56100199A (en) 1980-01-16 1980-01-16 Method and apparatus for manufacturing gallium antimony single crystal

Publications (2)

Publication Number Publication Date
JPS56100199A true JPS56100199A (en) 1981-08-11
JPS5759240B2 JPS5759240B2 (en) 1982-12-14

Family

ID=11534890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP263780A Granted JPS56100199A (en) 1980-01-16 1980-01-16 Method and apparatus for manufacturing gallium antimony single crystal

Country Status (1)

Country Link
JP (1) JPS56100199A (en)

Also Published As

Publication number Publication date
JPS5759240B2 (en) 1982-12-14

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