JPS55100295A - Production of single crystal thin film - Google Patents
Production of single crystal thin filmInfo
- Publication number
- JPS55100295A JPS55100295A JP609679A JP609679A JPS55100295A JP S55100295 A JPS55100295 A JP S55100295A JP 609679 A JP609679 A JP 609679A JP 609679 A JP609679 A JP 609679A JP S55100295 A JPS55100295 A JP S55100295A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- thin film
- film
- crystal thin
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To form a single crystal thin film of an arbitrary size on a quartz glass substrate, a polycrystal or different crystal substrate or the like by using a single crystal thin layer seed of the same material as a thin film in a microzone melting process.
CONSTITUTION: By vacuum deposition, sputtering, a CVD method or other method thin film 2 is formed on substrate 1 made of glassy material such as quartz glass or polycrystal or different crystal material having a m.p. higher than that of a single crystal thin film material to be formed. On film 2 single crystal thin layer 3 of the same material as film 2 is placed and irradiated with laser beams to melt part of layer 3 first. By slowly shifting the molten part film 2 is melted in succession. Thus, a crystal coinciding with the single crystal material is solidification-formed at a peripheral portion of the single crystal portion, and using the crystal as seed a single crystal is similarly solidified in the molten film in succession to obtain a single crystal thin film.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP609679A JPS55100295A (en) | 1979-01-24 | 1979-01-24 | Production of single crystal thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP609679A JPS55100295A (en) | 1979-01-24 | 1979-01-24 | Production of single crystal thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55100295A true JPS55100295A (en) | 1980-07-31 |
Family
ID=11628971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP609679A Pending JPS55100295A (en) | 1979-01-24 | 1979-01-24 | Production of single crystal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55100295A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5885519A (en) * | 1981-11-17 | 1983-05-21 | Sharp Corp | Manufacture of semiconductor device |
| JPS593091A (en) * | 1982-06-29 | 1984-01-09 | Toshiba Corp | Production of oxide single crystal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225564A (en) * | 1975-08-22 | 1977-02-25 | Hitachi Ltd | Semiconductor thin-film monocrystal |
| JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
-
1979
- 1979-01-24 JP JP609679A patent/JPS55100295A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225564A (en) * | 1975-08-22 | 1977-02-25 | Hitachi Ltd | Semiconductor thin-film monocrystal |
| JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5885519A (en) * | 1981-11-17 | 1983-05-21 | Sharp Corp | Manufacture of semiconductor device |
| JPS593091A (en) * | 1982-06-29 | 1984-01-09 | Toshiba Corp | Production of oxide single crystal |
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