JPS56100413A - Injecting method for ion - Google Patents

Injecting method for ion

Info

Publication number
JPS56100413A
JPS56100413A JP386380A JP386380A JPS56100413A JP S56100413 A JPS56100413 A JP S56100413A JP 386380 A JP386380 A JP 386380A JP 386380 A JP386380 A JP 386380A JP S56100413 A JPS56100413 A JP S56100413A
Authority
JP
Japan
Prior art keywords
mask
ions
injection
substrate
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP386380A
Other languages
Japanese (ja)
Inventor
Kazuhiko Tsuji
Takashi Hirao
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP386380A priority Critical patent/JPS56100413A/en
Publication of JPS56100413A publication Critical patent/JPS56100413A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To perform plural times of injection of ions by using, as an injection mask, a film having regions different in the projecting distance of ions in a selective manner and further by employing a sheet of the mask repeatedly. CONSTITUTION:The averaged permeation depth Rp of ions into an insulation film and a conductor film increases with energy of injection. Therefore, a mask having selectively a region (permeation) wherein the thickness of a single-crystalline or polycrystalline Si film is several hundreds Angstrom and a region (shielding) wherein the thickness is several mum or less is placed on a substrate and ions are injected with energy not enabling the permeation through the shielded region, whereby the mask and the substrate are separated from each other. That is, when the ions are injected with the energy within the range where Rp is several thousands Angstrom to several mum, a sheet of the mask can be employed in many times and thus it becomes unnecessary to form the mask for ion injection for each substrate as usual. The mask is formed by laminating films made of the same material and having different thickness or films of different kinds.
JP386380A 1980-01-16 1980-01-16 Injecting method for ion Pending JPS56100413A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP386380A JPS56100413A (en) 1980-01-16 1980-01-16 Injecting method for ion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP386380A JPS56100413A (en) 1980-01-16 1980-01-16 Injecting method for ion

Publications (1)

Publication Number Publication Date
JPS56100413A true JPS56100413A (en) 1981-08-12

Family

ID=11569029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP386380A Pending JPS56100413A (en) 1980-01-16 1980-01-16 Injecting method for ion

Country Status (1)

Country Link
JP (1) JPS56100413A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS521634A (en) * 1975-06-24 1977-01-07 Nippon Furnace Kogyo Kaisha Ltd Valve for fuel supply pipe

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS521634A (en) * 1975-06-24 1977-01-07 Nippon Furnace Kogyo Kaisha Ltd Valve for fuel supply pipe

Similar Documents

Publication Publication Date Title
TW340959B (en) Control of junction depth and channel length using generated interstitial gradients to oppose dopant diffusion
EP0417306A4 (en) Method of producing thin film
CN101308786A (en) Ion injection method of semiconductor device
JPS56100413A (en) Injecting method for ion
JPS5662361A (en) Semiconductor device
JPS5666038A (en) Formation of micro-pattern
JPS5671971A (en) Mos integrated circuit system and preparation method thereof
JPS5723239A (en) Manufacture of semiconductor device
JPS5783034A (en) Method for taper etching
JPS5360560A (en) Injection method of ion to treated substance surface
JPS56114381A (en) Semiconductor device
JPS55110037A (en) Method for making semiconductor device
JPS5524468A (en) Manufacture of semiconductor
JPS53110389A (en) Resistance forming method for semiconductor device
JPS5674929A (en) Insulating layer forming method
JPS5667941A (en) Forming method of electrode and wiring layer
JPS5212579A (en) Ion injection method and ion injector
JPS5773925A (en) Preparation of magnetic bubble element
JPS5671944A (en) Manufacture of semiconductor device
JPS5658227A (en) Self-alignment diffusing method
JPS5772331A (en) Manufacture of semiconductor device
JPS5764925A (en) Manufacture of semiconductor device
JPS54157139A (en) Method of forming the terminal surface of sprayed layer
JPS5360561A (en) Injection method of ion to treated substance surface
JPS5694759A (en) Wiring forming method