JPS56100A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56100A
JPS56100A JP7550979A JP7550979A JPS56100A JP S56100 A JPS56100 A JP S56100A JP 7550979 A JP7550979 A JP 7550979A JP 7550979 A JP7550979 A JP 7550979A JP S56100 A JPS56100 A JP S56100A
Authority
JP
Japan
Prior art keywords
redundant
column line
memory cell
address
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7550979A
Other languages
Japanese (ja)
Inventor
Takeo Tatematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7550979A priority Critical patent/JPS56100A/en
Priority to EP80901080A priority patent/EP0030245B1/en
Priority to PCT/JP1980/000132 priority patent/WO1980002889A1/en
Priority to US06/237,127 priority patent/US4473895A/en
Priority to DE8080901080T priority patent/DE3071955D1/en
Publication of JPS56100A publication Critical patent/JPS56100A/en
Pending legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE: To enable the switching from defective column line to redundant column line very simply if the address signal designates defective column line, by providing the redundant column line, coincidence circuit and transfer gate.
CONSTITUTION: The redundant cell for one column is added. Bn1, Bn2 are bit lines of redundant memory cell thus added and MC' is the redundant memory cell. Further, the address of the column having defective bit is permanently written in, and the coincidence circuit CC which inverts the output state when the address signal indicates the address, is provided. Further, the transfer gate, which is turned on or off in opposite phase with the outputs P, P' of the circuit CC, that is, switches TGa and TGb are provided. The data output buffer DOB is connected to the normal memory cell group of the data bus DB via the switch TGa and to the redundant cell of the data bus DB via the switch TGb.
COPYRIGHT: (C)1981,JPO&Japio
JP7550979A 1979-06-15 1979-06-15 Semiconductor memory device Pending JPS56100A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP7550979A JPS56100A (en) 1979-06-15 1979-06-15 Semiconductor memory device
EP80901080A EP0030245B1 (en) 1979-06-15 1980-06-14 Semiconductor memory device
PCT/JP1980/000132 WO1980002889A1 (en) 1979-06-15 1980-06-14 Semiconductor memory device
US06/237,127 US4473895A (en) 1979-06-15 1980-06-14 Semiconductor memory device
DE8080901080T DE3071955D1 (en) 1979-06-15 1980-06-14 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7550979A JPS56100A (en) 1979-06-15 1979-06-15 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS56100A true JPS56100A (en) 1981-01-06

Family

ID=13578272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7550979A Pending JPS56100A (en) 1979-06-15 1979-06-15 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56100A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179996A (en) * 1981-04-27 1982-11-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor storage device
JPS57198599A (en) * 1981-05-29 1982-12-06 Toshiba Corp Memory device having redundancy
JPH0218794A (en) * 1988-07-05 1990-01-23 Nec Corp Memory device
JPH0221500A (en) * 1988-07-08 1990-01-24 Hitachi Ltd Semiconductor memory with redundant circuit for defect relief
JPH0245146U (en) * 1988-09-19 1990-03-28
KR100386608B1 (en) * 2000-03-23 2003-06-02 주식회사 하이닉스반도체 date line switching circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179996A (en) * 1981-04-27 1982-11-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor storage device
JPS57198599A (en) * 1981-05-29 1982-12-06 Toshiba Corp Memory device having redundancy
JPH0218794A (en) * 1988-07-05 1990-01-23 Nec Corp Memory device
JPH0221500A (en) * 1988-07-08 1990-01-24 Hitachi Ltd Semiconductor memory with redundant circuit for defect relief
JPH0245146U (en) * 1988-09-19 1990-03-28
KR100386608B1 (en) * 2000-03-23 2003-06-02 주식회사 하이닉스반도체 date line switching circuit

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