JPS56103474A - Diode for rom or eeprom - Google Patents

Diode for rom or eeprom

Info

Publication number
JPS56103474A
JPS56103474A JP17568280A JP17568280A JPS56103474A JP S56103474 A JPS56103474 A JP S56103474A JP 17568280 A JP17568280 A JP 17568280A JP 17568280 A JP17568280 A JP 17568280A JP S56103474 A JPS56103474 A JP S56103474A
Authority
JP
Japan
Prior art keywords
eeprom
diode
rom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17568280A
Other languages
English (en)
Inventor
Etsuchi Horumubaagu Sukotsuto
Ei Furasuku Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of JPS56103474A publication Critical patent/JPS56103474A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/366—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H10D48/381—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
JP17568280A 1979-12-13 1980-12-12 Diode for rom or eeprom Pending JPS56103474A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US20827480A 1980-11-19 1980-11-19

Publications (1)

Publication Number Publication Date
JPS56103474A true JPS56103474A (en) 1981-08-18

Family

ID=26799984

Family Applications (3)

Application Number Title Priority Date Filing Date
JP17519980A Pending JPS56100464A (en) 1979-12-13 1980-12-11 Programmable cell used for programmable electronically operating row element
JP17520080A Pending JPS56115571A (en) 1979-12-13 1980-12-11 Thin film transistor
JP17568280A Pending JPS56103474A (en) 1979-12-13 1980-12-12 Diode for rom or eeprom

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP17519980A Pending JPS56100464A (en) 1979-12-13 1980-12-11 Programmable cell used for programmable electronically operating row element
JP17520080A Pending JPS56115571A (en) 1979-12-13 1980-12-11 Thin film transistor

Country Status (15)

Country Link
JP (3) JPS56100464A (ja)
KR (2) KR850001045B1 (ja)
AU (1) AU543740B2 (ja)
BE (1) BE886631A (ja)
CA (3) CA1155239A (ja)
DE (1) DE3046701A1 (ja)
FR (1) FR2475295A1 (ja)
GB (1) GB2066566B (ja)
IL (1) IL61671A (ja)
IT (1) IT1194001B (ja)
MX (1) MX150800A (ja)
NL (1) NL8006771A (ja)
SE (1) SE8008739L (ja)
SG (1) SG72784G (ja)
ZA (3) ZA807762B (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136966A (ja) * 1983-01-18 1984-08-06 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 電子マトリクスアレイの製法
JPS60153552U (ja) * 1984-03-24 1985-10-12 沖電気工業株式会社 Ｐｎ接合半導体装置
US6051851A (en) * 1994-04-28 2000-04-18 Canon Kabushiki Kaisha Semiconductor devices utilizing silicide reaction
JP2006148084A (ja) * 2004-10-22 2006-06-08 Semiconductor Energy Lab Co Ltd 半導体装置
US8227802B2 (en) 2004-10-22 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
JPS59501988A (ja) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− 安全弁装置及び方法
US4545111A (en) * 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US4569121A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
US4569120A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4914055A (en) * 1989-08-24 1990-04-03 Advanced Micro Devices, Inc. Semiconductor antifuse structure and method
GB9113795D0 (en) * 1991-06-26 1991-08-14 Philips Electronic Associated Thin-film rom devices and their manufacture
GB9117680D0 (en) * 1991-08-16 1991-10-02 Philips Electronic Associated Electronic matrix array devices
JP2500484B2 (ja) * 1994-07-11 1996-05-29 ソニー株式会社 薄膜トランジスタの製法
US6646912B2 (en) * 2001-06-05 2003-11-11 Hewlett-Packard Development Company, Lp. Non-volatile memory
US6599796B2 (en) * 2001-06-29 2003-07-29 Hewlett-Packard Development Company, L.P. Apparatus and fabrication process to reduce crosstalk in pirm memory array
JP3948292B2 (ja) 2002-02-01 2007-07-25 株式会社日立製作所 半導体記憶装置及びその製造方法
US7462857B2 (en) * 2002-09-19 2008-12-09 Sharp Kabushiki Kaisha Memory device including resistance-changing function body
JP4541651B2 (ja) * 2003-03-13 2010-09-08 シャープ株式会社 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器
JP4634014B2 (ja) * 2003-05-22 2011-02-16 株式会社日立製作所 半導体記憶装置
KR100504700B1 (ko) * 2003-06-04 2005-08-03 삼성전자주식회사 고집적 상변환 램
JP2008118108A (ja) * 2006-08-25 2008-05-22 Qimonda Ag 情報記憶素子およびその製造方法
JP2007019559A (ja) * 2006-10-23 2007-01-25 Hitachi Ltd 半導体記憶装置及びその製造方法
US7915603B2 (en) * 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
CN101689603B (zh) 2007-06-20 2015-08-12 台湾积体电路制造股份有限公司 电子元件及其制造方法
US9716225B2 (en) 2014-09-03 2017-07-25 Micron Technology, Inc. Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5387188A (en) * 1977-01-11 1978-08-01 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5457879A (en) * 1977-10-15 1979-05-10 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
JPS5488739A (en) * 1977-10-31 1979-07-14 Burroughs Corp Electrically rewritable memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122382A (en) * 1975-04-18 1976-10-26 Fujitsu Ltd Semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS53144274A (en) * 1977-05-23 1978-12-15 Hitachi Ltd Semiconductor device and its manufacture
DE2909197A1 (de) * 1978-03-20 1979-10-04 Texas Instruments Inc Verfahren zur herstellung eines festspeichers und festspeichermatrix

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5387188A (en) * 1977-01-11 1978-08-01 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5457879A (en) * 1977-10-15 1979-05-10 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
JPS5488739A (en) * 1977-10-31 1979-07-14 Burroughs Corp Electrically rewritable memory device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136966A (ja) * 1983-01-18 1984-08-06 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 電子マトリクスアレイの製法
JPS59136967A (ja) * 1983-01-18 1984-08-06 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 電子マトリクスアレ−及びその製法
JPS60153552U (ja) * 1984-03-24 1985-10-12 沖電気工業株式会社 Ｐｎ接合半導体装置
US6051851A (en) * 1994-04-28 2000-04-18 Canon Kabushiki Kaisha Semiconductor devices utilizing silicide reaction
JP2006148084A (ja) * 2004-10-22 2006-06-08 Semiconductor Energy Lab Co Ltd 半導体装置
US8227802B2 (en) 2004-10-22 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
MX150800A (es) 1984-07-19
JPS56115571A (en) 1981-09-10
KR850001045B1 (en) 1985-07-19
IT8026643A0 (it) 1980-12-12
KR830004681A (ko) 1983-07-16
IT1194001B (it) 1988-08-31
IL61671A (en) 1984-04-30
AU543740B2 (en) 1985-05-02
IL61671A0 (en) 1981-01-30
ZA807761B (en) 1981-12-30
KR830004679A (ko) 1983-07-16
ZA807762B (en) 1981-12-30
NL8006771A (nl) 1981-07-16
FR2475295A1 (fr) 1981-08-07
SE8008739L (sv) 1981-06-14
DE3046701A1 (de) 1981-10-15
CA1162327A (en) 1984-02-14
CA1155239A (en) 1983-10-11
ZA807763B (en) 1981-12-30
SG72784G (en) 1985-03-29
JPS56100464A (en) 1981-08-12
BE886631A (fr) 1981-04-01
AU6531580A (en) 1981-06-18
CA1161970A (en) 1984-02-07
GB2066566A (en) 1981-07-08
GB2066566B (en) 1984-07-04

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