JPS56108875A - Power supply apparatus for spattering apparatus - Google Patents

Power supply apparatus for spattering apparatus

Info

Publication number
JPS56108875A
JPS56108875A JP12424679A JP12424679A JPS56108875A JP S56108875 A JPS56108875 A JP S56108875A JP 12424679 A JP12424679 A JP 12424679A JP 12424679 A JP12424679 A JP 12424679A JP S56108875 A JPS56108875 A JP S56108875A
Authority
JP
Japan
Prior art keywords
power supply
spattering
supply apparatus
spattering apparatus
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12424679A
Other languages
English (en)
Japanese (ja)
Inventor
Jieimuzu Ueebaa Harorudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coulter Systems Corp
Original Assignee
Coulter Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/066,917 external-priority patent/US4284490A/en
Application filed by Coulter Systems Corp filed Critical Coulter Systems Corp
Publication of JPS56108875A publication Critical patent/JPS56108875A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP12424679A 1979-08-21 1979-09-28 Power supply apparatus for spattering apparatus Pending JPS56108875A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/066,917 US4284490A (en) 1978-09-28 1979-08-21 R.F. Sputtering apparatus including multi-network power supply

Publications (1)

Publication Number Publication Date
JPS56108875A true JPS56108875A (en) 1981-08-28

Family

ID=22072548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12424679A Pending JPS56108875A (en) 1979-08-21 1979-09-28 Power supply apparatus for spattering apparatus

Country Status (7)

Country Link
JP (1) JPS56108875A (fr)
CA (1) CA1143005A (fr)
DE (1) DE2939167A1 (fr)
FR (1) FR2464009A1 (fr)
GB (1) GB2058470A (fr)
NL (1) NL7907241A (fr)
SE (1) SE7908083L (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295370A (ja) * 1985-06-25 1986-12-26 Shinku Kikai Kogyo Kk スパツタ装置
JPH02156081A (ja) * 1988-12-09 1990-06-15 Tokuda Seisakusho Ltd スパッタ装置
JPH08319564A (ja) * 1988-01-11 1996-12-03 Tadahiro Omi 薄膜形成装置のスパッタリング制御装置
JP2008520091A (ja) * 2004-11-12 2008-06-12 オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト 大面積基板に好適な容量結合型ｒｆプラズマ反応器のインピーダンス整合

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001516954A (ja) * 1997-09-17 2001-10-02 東京エレクトロン株式会社 電気インピーダンス整合システムとその方法
DE10015699B4 (de) * 2000-03-27 2004-03-18 Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden Schaltungsanordnung zur Impedanzkompensation
DE202008006477U1 (de) * 2008-05-06 2008-07-24 Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden Vorrichtung zur Modifizierung von Substratoberflächen
CN117004917B (zh) * 2023-08-14 2025-08-15 天津吉兆源科技有限公司 一种均匀性调节装置及磁控溅射真空镀膜机

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295370A (ja) * 1985-06-25 1986-12-26 Shinku Kikai Kogyo Kk スパツタ装置
JPH08319564A (ja) * 1988-01-11 1996-12-03 Tadahiro Omi 薄膜形成装置のスパッタリング制御装置
JPH02156081A (ja) * 1988-12-09 1990-06-15 Tokuda Seisakusho Ltd スパッタ装置
JP2008520091A (ja) * 2004-11-12 2008-06-12 オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト 大面積基板に好適な容量結合型ｒｆプラズマ反応器のインピーダンス整合

Also Published As

Publication number Publication date
CA1143005A (fr) 1983-03-15
NL7907241A (nl) 1981-02-24
SE7908083L (sv) 1981-02-22
GB2058470A (en) 1981-04-08
FR2464009A1 (fr) 1981-02-27
DE2939167A1 (de) 1981-04-02

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