JPS56122134A - Resin-sealed type semiconductor device - Google Patents

Resin-sealed type semiconductor device

Info

Publication number
JPS56122134A
JPS56122134A JP2514280A JP2514280A JPS56122134A JP S56122134 A JPS56122134 A JP S56122134A JP 2514280 A JP2514280 A JP 2514280A JP 2514280 A JP2514280 A JP 2514280A JP S56122134 A JPS56122134 A JP S56122134A
Authority
JP
Japan
Prior art keywords
resin
elements
enclosure
semiconductor device
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2514280A
Other languages
English (en)
Japanese (ja)
Inventor
Koji Suzuki
Toshio Aoki
Sachie Kusanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2514280A priority Critical patent/JPS56122134A/ja
Priority to DE8181300546T priority patent/DE3170565D1/de
Priority to EP81300546A priority patent/EP0035331B1/fr
Publication of JPS56122134A publication Critical patent/JPS56122134A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
JP2514280A 1980-02-29 1980-02-29 Resin-sealed type semiconductor device Pending JPS56122134A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2514280A JPS56122134A (en) 1980-02-29 1980-02-29 Resin-sealed type semiconductor device
DE8181300546T DE3170565D1 (en) 1980-02-29 1981-02-10 Resin-sealed semiconductor device
EP81300546A EP0035331B1 (fr) 1980-02-29 1981-02-10 Dispositif semiconducteur enrobé de résine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2514280A JPS56122134A (en) 1980-02-29 1980-02-29 Resin-sealed type semiconductor device

Publications (1)

Publication Number Publication Date
JPS56122134A true JPS56122134A (en) 1981-09-25

Family

ID=12157726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2514280A Pending JPS56122134A (en) 1980-02-29 1980-02-29 Resin-sealed type semiconductor device

Country Status (3)

Country Link
EP (1) EP0035331B1 (fr)
JP (1) JPS56122134A (fr)
DE (1) DE3170565D1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164255A (ja) * 1982-03-23 1983-09-29 Fujitsu Ltd 半導体装置
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5693984A (en) * 1992-06-03 1997-12-02 Seiko Epson Corporation Semiconductor device having a heat radiator
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289854U (fr) * 1988-12-27 1990-07-17

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396417A1 (fr) * 1977-06-29 1979-01-26 Tokyo Shibaura Electric Co Composant semi-conducteur comprenant une resistance
GB2000638B (en) * 1977-06-29 1982-01-20 Tokyo Shibaura Electric Co Semiconductor device
FR2396413A1 (fr) * 1977-06-29 1979-01-26 Tokyo Shibaura Electric Co Composant semi-conducteur a couche de resistance de conductibilite du type p
JPS5439584A (en) * 1977-07-14 1979-03-27 Toshiba Corp Semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164255A (ja) * 1982-03-23 1983-09-29 Fujitsu Ltd 半導体装置
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5653891A (en) * 1992-06-03 1997-08-05 Seiko Epson Corporation Method of producing a semiconductor device with a heat sink
US5693984A (en) * 1992-06-03 1997-12-02 Seiko Epson Corporation Semiconductor device having a heat radiator
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5891759A (en) * 1993-12-16 1999-04-06 Seiko Epson Corporation Method of making a multiple heat sink resin sealing type semiconductor device
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads

Also Published As

Publication number Publication date
EP0035331A3 (en) 1982-09-29
EP0035331A2 (fr) 1981-09-09
DE3170565D1 (en) 1985-06-27
EP0035331B1 (fr) 1985-05-22

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