JPS5527645A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5527645A
JPS5527645A JP10074978A JP10074978A JPS5527645A JP S5527645 A JPS5527645 A JP S5527645A JP 10074978 A JP10074978 A JP 10074978A JP 10074978 A JP10074978 A JP 10074978A JP S5527645 A JPS5527645 A JP S5527645A
Authority
JP
Japan
Prior art keywords
polycrystalline
layers
electrode
layer
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10074978A
Other languages
Japanese (ja)
Other versions
JPS6227547B2 (en
Inventor
Masatake Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10074978A priority Critical patent/JPS5527645A/en
Publication of JPS5527645A publication Critical patent/JPS5527645A/en
Publication of JPS6227547B2 publication Critical patent/JPS6227547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To prevent deterioration and damage and insure firm connection in semiconductor elements, by forming silicide in polycrystalline Si layers and connecting to this surface an electrode via wax material.
CONSTITUTION: Both sides of semiconductor element 18, which has a planar PN junction and which is to be connected to lead electrode 19, are covered with polycrystalline Si layers 15 and 16, having the same type of conduction as these sides. Further, silicide is formed in polycrystalline Si layers 15 and 16. At the time when this surface is connected to electrode 19, a re-crystalized layer and an alloy layer of the so-called wax material are formed in polycrystalline Si layers 15 and 16. The re- crystalized layer and alloy layer act as good conductors and have high connecting strength. Further, the semiconductor element and the lead wire are firmly bonded by epoxy resin by means of a resin 21 forming device.
COPYRIGHT: (C)1980,JPO&Japio
JP10074978A 1978-08-17 1978-08-17 Semiconductor device Granted JPS5527645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10074978A JPS5527645A (en) 1978-08-17 1978-08-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10074978A JPS5527645A (en) 1978-08-17 1978-08-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5527645A true JPS5527645A (en) 1980-02-27
JPS6227547B2 JPS6227547B2 (en) 1987-06-15

Family

ID=14282171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10074978A Granted JPS5527645A (en) 1978-08-17 1978-08-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5527645A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
US4794445A (en) * 1986-07-31 1988-12-27 Hitachi, Ltd. Semiconductor device
US5920110A (en) * 1995-09-26 1999-07-06 Lsi Logic Corporation Antifuse device for use on a field programmable interconnect chip

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106174A (en) * 1978-02-08 1979-08-20 Nec Corp Semiconductor device and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106174A (en) * 1978-02-08 1979-08-20 Nec Corp Semiconductor device and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
US4794445A (en) * 1986-07-31 1988-12-27 Hitachi, Ltd. Semiconductor device
US5920110A (en) * 1995-09-26 1999-07-06 Lsi Logic Corporation Antifuse device for use on a field programmable interconnect chip

Also Published As

Publication number Publication date
JPS6227547B2 (en) 1987-06-15

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