JPS56124258A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS56124258A
JPS56124258A JP2654380A JP2654380A JPS56124258A JP S56124258 A JPS56124258 A JP S56124258A JP 2654380 A JP2654380 A JP 2654380A JP 2654380 A JP2654380 A JP 2654380A JP S56124258 A JPS56124258 A JP S56124258A
Authority
JP
Japan
Prior art keywords
channel
type
constitution
drain
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2654380A
Other languages
English (en)
Inventor
Eiji Oi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2654380A priority Critical patent/JPS56124258A/ja
Publication of JPS56124258A publication Critical patent/JPS56124258A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2654380A 1980-03-05 1980-03-05 Manufacturing of semiconductor device Pending JPS56124258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2654380A JPS56124258A (en) 1980-03-05 1980-03-05 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2654380A JPS56124258A (en) 1980-03-05 1980-03-05 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56124258A true JPS56124258A (en) 1981-09-29

Family

ID=12196410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2654380A Pending JPS56124258A (en) 1980-03-05 1980-03-05 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56124258A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251248A (ja) * 1985-08-30 1987-03-05 Toshiba Corp 半導体装置の製造方法
US5239195A (en) * 1990-05-17 1993-08-24 Hello S.A. Mos transistor with high threshold voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251248A (ja) * 1985-08-30 1987-03-05 Toshiba Corp 半導体装置の製造方法
US5239195A (en) * 1990-05-17 1993-08-24 Hello S.A. Mos transistor with high threshold voltage

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