JPS56131934A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56131934A
JPS56131934A JP3506680A JP3506680A JPS56131934A JP S56131934 A JPS56131934 A JP S56131934A JP 3506680 A JP3506680 A JP 3506680A JP 3506680 A JP3506680 A JP 3506680A JP S56131934 A JPS56131934 A JP S56131934A
Authority
JP
Japan
Prior art keywords
ash3
substrate
improved
laser
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3506680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS637022B2 (mo
Inventor
Akihiro Shibatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3506680A priority Critical patent/JPS56131934A/ja
Publication of JPS56131934A publication Critical patent/JPS56131934A/ja
Publication of JPS637022B2 publication Critical patent/JPS637022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Recrystallisation Techniques (AREA)
JP3506680A 1980-03-19 1980-03-19 Manufacture of semiconductor device Granted JPS56131934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3506680A JPS56131934A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3506680A JPS56131934A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56131934A true JPS56131934A (en) 1981-10-15
JPS637022B2 JPS637022B2 (mo) 1988-02-15

Family

ID=12431639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3506680A Granted JPS56131934A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56131934A (mo)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873112A (ja) * 1981-10-28 1983-05-02 Nippon Hoso Kyokai <Nhk> レ−ザアニ−ル方法
JPH05129203A (ja) * 1991-11-07 1993-05-25 Japan Steel Works Ltd:The エピタキシヤル薄膜の形成方法
WO2007097103A1 (ja) * 2006-02-23 2007-08-30 Ihi Corporation 化合物半導体の活性化方法及び装置
JP2008300617A (ja) * 2007-05-31 2008-12-11 Ihi Corp レーザアニール方法及びレーザアニール装置
WO2016093287A1 (ja) * 2014-12-10 2016-06-16 東京エレクトロン株式会社 微細構造形成方法、半導体デバイスの製造方法、及びｃｍｏｓの形成方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873112A (ja) * 1981-10-28 1983-05-02 Nippon Hoso Kyokai <Nhk> レ−ザアニ−ル方法
JPH05129203A (ja) * 1991-11-07 1993-05-25 Japan Steel Works Ltd:The エピタキシヤル薄膜の形成方法
WO2007097103A1 (ja) * 2006-02-23 2007-08-30 Ihi Corporation 化合物半導体の活性化方法及び装置
JP2007227629A (ja) * 2006-02-23 2007-09-06 Ishikawajima Harima Heavy Ind Co Ltd 化合物半導体の活性化方法及び装置
US7888250B2 (en) 2006-02-23 2011-02-15 Ihi Corporation Method and apparatus for activating compound semiconductor
KR101102635B1 (ko) * 2006-02-23 2012-01-04 가부시키가이샤 아이에이치아이 화합물 반도체의 활성화 방법 및 장치
JP2008300617A (ja) * 2007-05-31 2008-12-11 Ihi Corp レーザアニール方法及びレーザアニール装置
WO2016093287A1 (ja) * 2014-12-10 2016-06-16 東京エレクトロン株式会社 微細構造形成方法、半導体デバイスの製造方法、及びｃｍｏｓの形成方法

Also Published As

Publication number Publication date
JPS637022B2 (mo) 1988-02-15

Similar Documents

Publication Publication Date Title
JPS56131934A (en) Manufacture of semiconductor device
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
JPS5737827A (en) Manufacture of semiconductor device
JPS5233118A (en) Flow regulator with water level corrective device
JPS5683948A (en) Processing of semiconductor
JPS5437690A (en) Manufacture for semiconductor device
JPS56134739A (en) Manufacture of semiconductor device
JPS5460858A (en) Manufacture of gallium arsenide crystal wafer
JPS57201032A (en) Silicon single crystal semiconductor device
JPS5336706A (en) Jet pump flow-quantity controlling valve used for heating system
JPS5211860A (en) Liquid phase epitaxial device
JPS53142870A (en) Manufacture for semiconductor device
JPS5265768A (en) Equipment for treatment of liquid which produces heat of dilution
JPS5421264A (en) Forming method of semiconductor surface magnetization
JPS52111473A (en) Ribbon crystal growth method
JPS52128057A (en) Manufacture of arsenide gallium epitaxial thin layer
JPS52140274A (en) Pressure-reduction vapor growth method
JPS522275A (en) Device of forming semiconductor substrates
JPS57164529A (en) Dry etching method
JPS5691418A (en) Heat treatment device
JPS5419364A (en) Semiconductor device
JPS5481179A (en) Heat treatment of single crystal
JPS5334465A (en) Manufacture for semiconductor epitaxial grown layer
JPS5595418A (en) Piezoelectric vibrator and its manufacture
JPS54103671A (en) Production of semiconductor device