JPS57201032A - Silicon single crystal semiconductor device - Google Patents

Silicon single crystal semiconductor device

Info

Publication number
JPS57201032A
JPS57201032A JP56086196A JP8619681A JPS57201032A JP S57201032 A JPS57201032 A JP S57201032A JP 56086196 A JP56086196 A JP 56086196A JP 8619681 A JP8619681 A JP 8619681A JP S57201032 A JPS57201032 A JP S57201032A
Authority
JP
Japan
Prior art keywords
single crystal
silicon single
density
semiconductor device
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56086196A
Other languages
Japanese (ja)
Other versions
JPH0318330B2 (en
Inventor
Toshiyuki Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56086196A priority Critical patent/JPS57201032A/en
Publication of JPS57201032A publication Critical patent/JPS57201032A/en
Publication of JPH0318330B2 publication Critical patent/JPH0318330B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a silicon semiconductor device having no crystalline defect by setting the crystal defect density in the section of a single crystal semiconductor device in a range of 7X10<3>cm<-2> to 5X10<4>cm<-2>. CONSTITUTION:When the defect density of the section of a silicon single crystal wafer exceeds 5X10<4>cm<-2>, many laminar defects (line defects) are produced, while when the density becomes less than 7X10<3>cm<-2>, may ultrafine defects are produced. On the other hand, the density of the crystal defects in the section of the silicon single crystal substrate is varied even by the various conditions (e.g., oxygen density, or final heat treatment) of the silicon single crystal substrate. Accordingly, the crystal defect density of the section is most adapted in the range of 7X10<3>cm<-2>-5X10<4>cm<-2>.
JP56086196A 1981-06-04 1981-06-04 Silicon single crystal semiconductor device Granted JPS57201032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56086196A JPS57201032A (en) 1981-06-04 1981-06-04 Silicon single crystal semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56086196A JPS57201032A (en) 1981-06-04 1981-06-04 Silicon single crystal semiconductor device

Publications (2)

Publication Number Publication Date
JPS57201032A true JPS57201032A (en) 1982-12-09
JPH0318330B2 JPH0318330B2 (en) 1991-03-12

Family

ID=13880021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56086196A Granted JPS57201032A (en) 1981-06-04 1981-06-04 Silicon single crystal semiconductor device

Country Status (1)

Country Link
JP (1) JPS57201032A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US4868133A (en) * 1988-02-11 1989-09-19 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using RTA
US4885257A (en) * 1983-07-29 1989-12-05 Kabushiki Kaisha Toshiba Gettering process with multi-step annealing and inert ion implantation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885257A (en) * 1983-07-29 1989-12-05 Kabushiki Kaisha Toshiba Gettering process with multi-step annealing and inert ion implantation
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US4868133A (en) * 1988-02-11 1989-09-19 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using RTA

Also Published As

Publication number Publication date
JPH0318330B2 (en) 1991-03-12

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