JPS5615037A - Manufacture of alloy junction type semiconductor device - Google Patents

Manufacture of alloy junction type semiconductor device

Info

Publication number
JPS5615037A
JPS5615037A JP9244579A JP9244579A JPS5615037A JP S5615037 A JPS5615037 A JP S5615037A JP 9244579 A JP9244579 A JP 9244579A JP 9244579 A JP9244579 A JP 9244579A JP S5615037 A JPS5615037 A JP S5615037A
Authority
JP
Japan
Prior art keywords
semiconductor device
alloy
type semiconductor
manufacture
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9244579A
Other languages
Japanese (ja)
Inventor
Yoshinori Kitagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9244579A priority Critical patent/JPS5615037A/en
Publication of JPS5615037A publication Critical patent/JPS5615037A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To eliminate the necessity of a step of removing a diffused layer and thus simplify the step of manufacturing an alloy junction type semiconductor device by attaching an alloy metal to a high density diffused layer formed in a semiconductor substrate and alloying the metal through the diffused layer with a part of the substrate. CONSTITUTION:High density diffused layers 2a, 2b are formed on both side surfaces of an N-type silicon wafer 1. Then, a P-type alloy metal such as, for example, Al 3 is attached to the surface of one diffused layer 2a, the Al 3 is alloyed to form a P-type alloy layer 4 having a P-N junction at a part of the wafer 1. Thereafter, the vicinity of the P-N junction is etched and removed.
JP9244579A 1979-07-18 1979-07-18 Manufacture of alloy junction type semiconductor device Pending JPS5615037A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9244579A JPS5615037A (en) 1979-07-18 1979-07-18 Manufacture of alloy junction type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9244579A JPS5615037A (en) 1979-07-18 1979-07-18 Manufacture of alloy junction type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5615037A true JPS5615037A (en) 1981-02-13

Family

ID=14054599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9244579A Pending JPS5615037A (en) 1979-07-18 1979-07-18 Manufacture of alloy junction type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5615037A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890466U (en) * 1981-12-11 1983-06-18 沖電気工業株式会社 Banknote discrimination device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890466U (en) * 1981-12-11 1983-06-18 沖電気工業株式会社 Banknote discrimination device

Similar Documents

Publication Publication Date Title
JPS551103A (en) Semiconductor resistor
JPS55128869A (en) Semiconductor device and method of fabricating the same
JPS5615037A (en) Manufacture of alloy junction type semiconductor device
JPS54161887A (en) Schottky diode containing guard ring and its manufacture
JPS5575229A (en) Semiconductor device
JPS55153325A (en) Manufacture of semiconductor device
JPS5578568A (en) Manufacture of semiconductor device
JPS6445159A (en) Semiconductor device
JPS57143841A (en) Insulation separating composition
JPS55162263A (en) Semiconductor device
JPS5655060A (en) Semiconductor integrated circuit device
JPS56148871A (en) Schottky barrier diode
JPS5736876A (en) Semiconductor photodetector
JPS57128039A (en) Semiconductor device
GB920306A (en) Fabrication method for semiconductor devices
JPS56140631A (en) Manufacture of semiconductor device
JPS5637622A (en) Manufacture of semiconductor device
JPS538058A (en) Production of semiconductor device
JPS5580344A (en) Manufacture of semiconductor integrated circuit
JPS5555526A (en) Method of manufacturing electrode
JPS5717184A (en) Semiconductor device for generating photoelectromotive force
JPS554941A (en) Method of manufacturing variable capacity diode
JPS57100739A (en) Semiconductor device
JPS5478680A (en) Semicondcutor device
JPS564272A (en) Semiconductor device