JPS6445159A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6445159A
JPS6445159A JP62200996A JP20099687A JPS6445159A JP S6445159 A JPS6445159 A JP S6445159A JP 62200996 A JP62200996 A JP 62200996A JP 20099687 A JP20099687 A JP 20099687A JP S6445159 A JPS6445159 A JP S6445159A
Authority
JP
Japan
Prior art keywords
region
surface region
type isolated
substrate body
isolated layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62200996A
Other languages
Japanese (ja)
Inventor
Tsutomu Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP62200996A priority Critical patent/JPS6445159A/en
Priority to US07/213,073 priority patent/US4881107A/en
Publication of JPS6445159A publication Critical patent/JPS6445159A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide a conductivity-modulated MOSFET with high breakdown strength by a method wherein an island region isolated from a base region by a first conductivity type isolated layer and a first conductivity type isolated and diffused region formed on a surface region to reach the isolated layer is provided. CONSTITUTION:A first n<->surface region 3 as a first substrate body is formed on a p<+>region 1 while a p-type isolated layer 5 as a second substrate body is formed in a specified position on the main substrate to be a second n<->surface region 4. Next, the first substrate body and the second substrate body are junctioned by direct junction of respective substrates into an n<->surface region 2 in specified thickness simultaneously forming the p-type isolated layer 5 in specified position on the boundary part between the first n<->surface region 3 and the second n<->surface region 4. Then, the second n<->surface region 4 is divided into a surface region 4a for base region and an island region 4b wherein other semiconductor elements 20, 30 are formed by the p-type isolated layer 5 and a p-type isolated and diffused region 6. Through these procedures, a semiconductor device can be provided with high breakdown strength.
JP62200996A 1987-07-03 1987-08-13 Semiconductor device Pending JPS6445159A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62200996A JPS6445159A (en) 1987-08-13 1987-08-13 Semiconductor device
US07/213,073 US4881107A (en) 1987-07-03 1988-06-29 IC device having a vertical MOSFET and an auxiliary component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62200996A JPS6445159A (en) 1987-08-13 1987-08-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6445159A true JPS6445159A (en) 1989-02-17

Family

ID=16433772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62200996A Pending JPS6445159A (en) 1987-07-03 1987-08-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6445159A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0683529A1 (en) * 1994-05-19 1995-11-22 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Power integrated circuit ("PIC") structure with a vertical IGBT, and manufacturing process thereof
JPH07321214A (en) * 1994-05-19 1995-12-08 Consorzio Per La Ric Sulla Microelettronica Nel Mezzogiorno Power integrated circuit structure and manufacturing method thereof
WO2012020498A1 (en) * 2010-08-12 2012-02-16 富士電機株式会社 Manufacturing method for semi-conductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0683529A1 (en) * 1994-05-19 1995-11-22 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Power integrated circuit ("PIC") structure with a vertical IGBT, and manufacturing process thereof
JPH07321214A (en) * 1994-05-19 1995-12-08 Consorzio Per La Ric Sulla Microelettronica Nel Mezzogiorno Power integrated circuit structure and manufacturing method thereof
US5556792A (en) * 1994-05-19 1996-09-17 Consorzio Per La Ricerca Sulla Microelecttronica Nel Mezzogiorno Process for manufacturing a power integrated circuit ("PIC") structure with a vertical IGBT
US5703385A (en) * 1994-05-19 1997-12-30 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power integrated circuit ("PIC") structure with a vertical IGBT
WO2012020498A1 (en) * 2010-08-12 2012-02-16 富士電機株式会社 Manufacturing method for semi-conductor device
US8685801B2 (en) 2010-08-12 2014-04-01 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

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