JPS5615045A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS5615045A
JPS5615045A JP9124079A JP9124079A JPS5615045A JP S5615045 A JPS5615045 A JP S5615045A JP 9124079 A JP9124079 A JP 9124079A JP 9124079 A JP9124079 A JP 9124079A JP S5615045 A JPS5615045 A JP S5615045A
Authority
JP
Japan
Prior art keywords
film
mask
pattern
chamber
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9124079A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Haruhiko Abe
Teruhiko Yamazaki
Tadao Kato
Sumio Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9124079A priority Critical patent/JPS5615045A/en
Publication of JPS5615045A publication Critical patent/JPS5615045A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To simplify the steps of forming the pattern by irradiating a charge beam to the outer surface of a region to be etched in an organic gas atmosphere to form a hard-etching thin film and dry etching it with the thin film as a mask. CONSTITUTION:A chamber is evacuated to a vacuum to irradiate electron beam to a silicon substrate 1. Then, Trichlene gas is introduced into the chamber, and an electron beam A is irradiated only to the polycrystalline silicon 3 on a gate oxide film 2. In this manner a carbon film 7 is adhered onto the polycrystalline silicon portion 3, and it is plasma etched with the film 7 as a mask to form a silicon gate 3a thereon.
JP9124079A 1979-07-17 1979-07-17 Formation of pattern Pending JPS5615045A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9124079A JPS5615045A (en) 1979-07-17 1979-07-17 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9124079A JPS5615045A (en) 1979-07-17 1979-07-17 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS5615045A true JPS5615045A (en) 1981-02-13

Family

ID=14020889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9124079A Pending JPS5615045A (en) 1979-07-17 1979-07-17 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS5615045A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167428A (en) * 1984-02-10 1985-08-30 Mitsubishi Electric Corp Fine process
JPS6110241A (en) * 1984-06-26 1986-01-17 Toshiba Corp Manufacture of semiconductor device
DE4334891A1 (en) * 1993-10-13 1995-04-20 Dresden Ev Inst Festkoerper Method and device for the preparation of materials samples for examinations of materials

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461477A (en) * 1977-10-26 1979-05-17 Cho Lsi Gijutsu Kenkyu Kumiai Method of machining by electron beam or ion beam irradiation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461477A (en) * 1977-10-26 1979-05-17 Cho Lsi Gijutsu Kenkyu Kumiai Method of machining by electron beam or ion beam irradiation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167428A (en) * 1984-02-10 1985-08-30 Mitsubishi Electric Corp Fine process
JPS6110241A (en) * 1984-06-26 1986-01-17 Toshiba Corp Manufacture of semiconductor device
DE4334891A1 (en) * 1993-10-13 1995-04-20 Dresden Ev Inst Festkoerper Method and device for the preparation of materials samples for examinations of materials

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