JPS5615053A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5615053A
JPS5615053A JP9080079A JP9080079A JPS5615053A JP S5615053 A JPS5615053 A JP S5615053A JP 9080079 A JP9080079 A JP 9080079A JP 9080079 A JP9080079 A JP 9080079A JP S5615053 A JPS5615053 A JP S5615053A
Authority
JP
Japan
Prior art keywords
electrode
external
thyristor
semiconductor device
dusts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9080079A
Other languages
Japanese (ja)
Other versions
JPS6022823B2 (en
Inventor
Shinzo Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP54090800A priority Critical patent/JPS6022823B2/en
Publication of JPS5615053A publication Critical patent/JPS5615053A/en
Publication of JPS6022823B2 publication Critical patent/JPS6022823B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To prevent an erroneous operation of the semiconductor device due to the adhesion of dusts or the like onto the surface of a sealing member therefor by forming the second external electrode energized by a main current between the first external electrode and an external control electrode for driving a three-terminal semiconductor element. CONSTITUTION:The first and second external thyristor gate electrodes 17 and 19 are so disposed as to interpose the first and second external thyristor auxiliary cathode electodes 18 and 20 by the first external thyristor anode electrode 14, the first external thyristor cathode electrode 15 and the second external thyristor anode electrode 16 provided on the first electrode mounting seat 11a. In this manner it can prevent an erroneous operation of the semiconductor device due to the contamination of an accommodation container caused by the fact that dusts or the like is adhered on the surface of the container 11 and particularly on the surface of the electrode mounting seats 11a, 11b to thereby lower the insulating resistance thereat to absorb the current flowing through the electrodes 16 to 19 to the electrode 20.
JP54090800A 1979-07-16 1979-07-16 semiconductor equipment Expired JPS6022823B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54090800A JPS6022823B2 (en) 1979-07-16 1979-07-16 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54090800A JPS6022823B2 (en) 1979-07-16 1979-07-16 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5615053A true JPS5615053A (en) 1981-02-13
JPS6022823B2 JPS6022823B2 (en) 1985-06-04

Family

ID=14008655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54090800A Expired JPS6022823B2 (en) 1979-07-16 1979-07-16 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6022823B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984458A (en) * 1982-11-04 1984-05-16 Mitsubishi Electric Corp Gate turn off thyristor assembled body
JPS59110148A (en) * 1982-12-03 1984-06-26 シ−メンス・アクチエンゲセルシヤフト Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984458A (en) * 1982-11-04 1984-05-16 Mitsubishi Electric Corp Gate turn off thyristor assembled body
JPS59110148A (en) * 1982-12-03 1984-06-26 シ−メンス・アクチエンゲセルシヤフト Semiconductor device

Also Published As

Publication number Publication date
JPS6022823B2 (en) 1985-06-04

Similar Documents

Publication Publication Date Title
EP0164316A3 (en) Electrical inclination sensor and method for its manufacture
JPS5615053A (en) Semiconductor device
JPS57117276A (en) Semiconductor device
JPS57100770A (en) Switching element
US4089024A (en) Semiconductor switching device
JPS5312281A (en) Semiconductor control rectifying element
JPS562672A (en) Schottky barrier diode
JPS57172765A (en) Electrostatic induction thyristor
JPS5346290A (en) Semiconductor device
JPS6449276A (en) Semiconductor device
JPS5596678A (en) Reverse conducting thyristor
JPS5526624A (en) Semiconductor device
IE792474L (en) Switching device
JPS5713762A (en) Light energized semiconductor device
JPS5655068A (en) Thyristor
JPS5681970A (en) Semiconductor switching device
JPS5799783A (en) Field effect transistor
JPS55150551A (en) Thin battery
JPS57199279A (en) Semiconductor luminous element and manufacture thereof
JPS5780769A (en) Semiconductor device
JPS5464966A (en) Semiconductor switch circuit
JPS55117270A (en) Junction breakdown type field programmable cell array semiconductor device
JPS57148377A (en) Semiconductor device
JPS5383477A (en) Reverse conducting thyristor
KR830001742A (en) Gate control semiconductor device