JPS56150856A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56150856A
JPS56150856A JP5467180A JP5467180A JPS56150856A JP S56150856 A JPS56150856 A JP S56150856A JP 5467180 A JP5467180 A JP 5467180A JP 5467180 A JP5467180 A JP 5467180A JP S56150856 A JPS56150856 A JP S56150856A
Authority
JP
Japan
Prior art keywords
type
film
oxidized
thermally oxidized
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5467180A
Other languages
Japanese (ja)
Other versions
JPS6043028B2 (en
Inventor
Michihiro Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55054671A priority Critical patent/JPS6043028B2/en
Publication of JPS56150856A publication Critical patent/JPS56150856A/en
Publication of JPS6043028B2 publication Critical patent/JPS6043028B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the cost of a semiconductor device chip by forming thin and thick thermally oxidized films on P type and N type surfaces respectively, exposing the P type surface, introducing and N type impurity, thereby reducing the number of stages of masking a C-MOS IC. CONSTITUTION:After an oxidized film 2 formed on an N type substrate 1 is used as a mask to form a P type well 3, a thin oxidized film 2' is formed on a P type region, and a nitrided film 4 is accumulated on the overall surface. After the film 4 is etched with a resist mask patterned with both N type and P type channel source and drain regions, the film 2' is removed to expose the P type surface. After an N<+> type impurity is introduced from the exposed part, it is thermally oxidized and treated to form a thick oxidized film 32 on the N<+> type region. Thereafter, the thermally oxidized film is so etched on the overall surface as to expose only the surface of the substrate 1, and a P<+> type impurity is introduced from the exposed surface. Thus, source and drain regions can be formed for both the N type and the P type channels with the same mask, thereby reducing the number of steps.
JP55054671A 1980-04-24 1980-04-24 Manufacturing method of semiconductor device Expired JPS6043028B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55054671A JPS6043028B2 (en) 1980-04-24 1980-04-24 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55054671A JPS6043028B2 (en) 1980-04-24 1980-04-24 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56150856A true JPS56150856A (en) 1981-11-21
JPS6043028B2 JPS6043028B2 (en) 1985-09-26

Family

ID=12977236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55054671A Expired JPS6043028B2 (en) 1980-04-24 1980-04-24 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6043028B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249360A (en) * 1984-05-24 1985-12-10 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPH01283920A (en) * 1988-05-11 1989-11-15 Meidensha Corp Manufacture of semiconductor element
JPH06163441A (en) * 1992-11-24 1994-06-10 Matsushita Electric Works Ltd Manufacture of electrostatic induction semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249360A (en) * 1984-05-24 1985-12-10 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPH01283920A (en) * 1988-05-11 1989-11-15 Meidensha Corp Manufacture of semiconductor element
JPH06163441A (en) * 1992-11-24 1994-06-10 Matsushita Electric Works Ltd Manufacture of electrostatic induction semiconductor device

Also Published As

Publication number Publication date
JPS6043028B2 (en) 1985-09-26

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