JPS56150856A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56150856A JPS56150856A JP5467180A JP5467180A JPS56150856A JP S56150856 A JPS56150856 A JP S56150856A JP 5467180 A JP5467180 A JP 5467180A JP 5467180 A JP5467180 A JP 5467180A JP S56150856 A JPS56150856 A JP S56150856A
- Authority
- JP
- Japan
- Prior art keywords
- type
- film
- oxidized
- thermally oxidized
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55054671A JPS6043028B2 (ja) | 1980-04-24 | 1980-04-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55054671A JPS6043028B2 (ja) | 1980-04-24 | 1980-04-24 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56150856A true JPS56150856A (en) | 1981-11-21 |
| JPS6043028B2 JPS6043028B2 (ja) | 1985-09-26 |
Family
ID=12977236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55054671A Expired JPS6043028B2 (ja) | 1980-04-24 | 1980-04-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043028B2 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60249360A (ja) * | 1984-05-24 | 1985-12-10 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
| JPH01283920A (ja) * | 1988-05-11 | 1989-11-15 | Meidensha Corp | 半導体素子の製造方法 |
| JPH06163441A (ja) * | 1992-11-24 | 1994-06-10 | Matsushita Electric Works Ltd | 静電誘導半導体装置の製造方法 |
-
1980
- 1980-04-24 JP JP55054671A patent/JPS6043028B2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60249360A (ja) * | 1984-05-24 | 1985-12-10 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
| JPH01283920A (ja) * | 1988-05-11 | 1989-11-15 | Meidensha Corp | 半導体素子の製造方法 |
| JPH06163441A (ja) * | 1992-11-24 | 1994-06-10 | Matsushita Electric Works Ltd | 静電誘導半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6043028B2 (ja) | 1985-09-26 |
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