JPS5619595A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5619595A
JPS5619595A JP9351979A JP9351979A JPS5619595A JP S5619595 A JPS5619595 A JP S5619595A JP 9351979 A JP9351979 A JP 9351979A JP 9351979 A JP9351979 A JP 9351979A JP S5619595 A JPS5619595 A JP S5619595A
Authority
JP
Japan
Prior art keywords
defective
word line
redundancy
address
normal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9351979A
Other languages
Japanese (ja)
Other versions
JPS6031038B2 (en
Inventor
Takeo Tatematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54093519A priority Critical patent/JPS6031038B2/en
Priority to EP80901080A priority patent/EP0030245B1/en
Priority to US06/237,127 priority patent/US4473895A/en
Priority to PCT/JP1980/000132 priority patent/WO1980002889A1/en
Priority to DE8080901080T priority patent/DE3071955D1/en
Publication of JPS5619595A publication Critical patent/JPS5619595A/en
Publication of JPS6031038B2 publication Critical patent/JPS6031038B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE: To reduce the access time of dynamic type RAM, by providing the redundancy word line of static type memory cell and switching the normal and redundancy memory according to the result of judgement of defective address.
CONSTITUTION: The redundancy word line W' providing the static type memory cell SM is given to the dynamic type RAM. Further, the defective address coincidence circuit COMP compares the address of the defective word line in the normal word line W programmed PRO in advance with the row address RA input at the cell selection, and if judged as defective, the gates Q3,Qs are controlled. Accordingly, if defective, the output of the redundancy memory SM is input to the output buffer OB via the gate Qs. Thus, since the switching of the normal and redundancy memory cells can be made with the result of the defective address judgement before column addressing, the access time can be reduced.
COPYRIGHT: (C)1981,JPO&Japio
JP54093519A 1979-06-15 1979-07-23 semiconductor storage device Expired JPS6031038B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP54093519A JPS6031038B2 (en) 1979-07-23 1979-07-23 semiconductor storage device
EP80901080A EP0030245B1 (en) 1979-06-15 1980-06-14 Semiconductor memory device
US06/237,127 US4473895A (en) 1979-06-15 1980-06-14 Semiconductor memory device
PCT/JP1980/000132 WO1980002889A1 (en) 1979-06-15 1980-06-14 Semiconductor memory device
DE8080901080T DE3071955D1 (en) 1979-06-15 1980-06-14 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54093519A JPS6031038B2 (en) 1979-07-23 1979-07-23 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5619595A true JPS5619595A (en) 1981-02-24
JPS6031038B2 JPS6031038B2 (en) 1985-07-19

Family

ID=14084573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54093519A Expired JPS6031038B2 (en) 1979-06-15 1979-07-23 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6031038B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01224999A (en) * 1988-03-04 1989-09-07 Mitsubishi Electric Corp Semiconductor memory device
JPH02282998A (en) * 1989-04-24 1990-11-20 Nec Corp Memory circuit
EP1168179A1 (en) * 2000-06-30 2002-01-02 STMicroelectronics S.A. Dynamic memory with spare cells
US7266036B2 (en) 2003-06-24 2007-09-04 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01224999A (en) * 1988-03-04 1989-09-07 Mitsubishi Electric Corp Semiconductor memory device
US5122987A (en) * 1988-03-04 1992-06-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with individually addressable space cells capable of driving a data bus
JPH02282998A (en) * 1989-04-24 1990-11-20 Nec Corp Memory circuit
EP1168179A1 (en) * 2000-06-30 2002-01-02 STMicroelectronics S.A. Dynamic memory with spare cells
FR2811132A1 (en) * 2000-06-30 2002-01-04 St Microelectronics Sa DYNAMIC MEMORY CIRCUIT COMPRISING BACKUP CELLS
US6563749B2 (en) 2000-06-30 2003-05-13 Stmicroelectronics S.A. Dynamic memory circuit including spare cells
US7266036B2 (en) 2003-06-24 2007-09-04 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device

Also Published As

Publication number Publication date
JPS6031038B2 (en) 1985-07-19

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