JPS5619634A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5619634A
JPS5619634A JP9501379A JP9501379A JPS5619634A JP S5619634 A JPS5619634 A JP S5619634A JP 9501379 A JP9501379 A JP 9501379A JP 9501379 A JP9501379 A JP 9501379A JP S5619634 A JPS5619634 A JP S5619634A
Authority
JP
Japan
Prior art keywords
contact
stylus
wiring layer
exactly
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9501379A
Other languages
Japanese (ja)
Inventor
Kazuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9501379A priority Critical patent/JPS5619634A/en
Publication of JPS5619634A publication Critical patent/JPS5619634A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To easily and exactly bring a probe into contact with the semiconductor device of multilayer wiring architecture by forming a contacting portion for measuring stylus wider than any between the contacting portion of the lower wiring layer with upper wiring layer with connecting portion of the element. CONSTITUTION:An SiO2 film 11 is formed on an Si semiconductor chip 10, an upper layer wiring connector 12a, a measuring contact portion 12b, and an element connecting portion 12c are provided to be connected to a circuit block 13. An SiO2 film 14 is coated thereon, an opening is perforated at the connecting portion 12a, and is connected to the upper wiring layer 15. Since there is a wider portion 12b than any between the connecting portions 12a and 12c, this configuration can easily and exactly bring the measuring stylus into contact with the wide portion 12b so as to exactly supply operation voltage to the circuit block 13 from the stylus. Accordingly, it can smoothly execute the analysis of improper portion.
JP9501379A 1979-07-27 1979-07-27 Semiconductor device Pending JPS5619634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9501379A JPS5619634A (en) 1979-07-27 1979-07-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9501379A JPS5619634A (en) 1979-07-27 1979-07-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5619634A true JPS5619634A (en) 1981-02-24

Family

ID=14126089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9501379A Pending JPS5619634A (en) 1979-07-27 1979-07-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5619634A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192062A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor integrated circuit device
JPS57211744A (en) * 1981-06-24 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS59216163A (en) * 1983-05-24 1984-12-06 Fuji Photo Film Co Ltd Electrostatic charging and exposing part of electrophotographic device
JPS6419739A (en) * 1988-06-24 1989-01-23 Hitachi Ltd Semiconductor integrated circuit device
JPS6427241A (en) * 1988-06-24 1989-01-30 Hitachi Ltd Semiconductor integrated circuit device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323570A (en) * 1976-08-18 1978-03-04 Mitsubishi Electric Corp Forming method of minute conductive regions to semicond uctor element chip surface
JPS5441080A (en) * 1977-09-07 1979-03-31 Nec Corp Semiconductor element for evaluation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323570A (en) * 1976-08-18 1978-03-04 Mitsubishi Electric Corp Forming method of minute conductive regions to semicond uctor element chip surface
JPS5441080A (en) * 1977-09-07 1979-03-31 Nec Corp Semiconductor element for evaluation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192062A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor integrated circuit device
JPS57211744A (en) * 1981-06-24 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS59216163A (en) * 1983-05-24 1984-12-06 Fuji Photo Film Co Ltd Electrostatic charging and exposing part of electrophotographic device
JPS6419739A (en) * 1988-06-24 1989-01-23 Hitachi Ltd Semiconductor integrated circuit device
JPS6427241A (en) * 1988-06-24 1989-01-30 Hitachi Ltd Semiconductor integrated circuit device

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