JPS6419739A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6419739A JPS6419739A JP63154701A JP15470188A JPS6419739A JP S6419739 A JPS6419739 A JP S6419739A JP 63154701 A JP63154701 A JP 63154701A JP 15470188 A JP15470188 A JP 15470188A JP S6419739 A JPS6419739 A JP S6419739A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- hole
- wiring
- psg
- constituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- CZDXOTYCLJAFBF-UHFFFAOYSA-N P(=O)(=O)[Si] Chemical compound P(=O)(=O)[Si] CZDXOTYCLJAFBF-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To make it possible to easily and accurately observe the signal inside an IC having a multilayer interconnection by a method wherein the title device is constituted in such a manner that the lower layer wiring is led out to the observation pad on the upper part through the intermediary of the through hole on an interlayer insulating film, and that the internal signal waveform or the like is observed from said observation pad. CONSTITUTION:Logical blocks 1 are connected with each other through the Al 2 (second layer Al wiring) of a multilayer interconnection, Al 1 (Alwiring of the first layer), and a system having a large-scale logic function as a whole is constituted. The polysilicon wiring, which is the output lead-out wire of the element of a unit cell, PS on the bottom layer is guided to the field SiO2 film 1, and it is connected to the aluminum wiring Al 1 on the upper layer through the intermediary of the through hole TH1 formed on a phospho-silicon glass film PSG 1, and besides, it is connected to the second layer Al2 in the through hole TH2 formed on the PSG 2. Said Al 2 is connected to the third layer Al 3 located in the through hole TH3 formed on the PSG 3. Through these procedures, an observation pad P1 is constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63154701A JPH0622256B2 (en) | 1988-06-24 | 1988-06-24 | Method for manufacturing semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63154701A JPH0622256B2 (en) | 1988-06-24 | 1988-06-24 | Method for manufacturing semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6419739A true JPS6419739A (en) | 1989-01-23 |
| JPH0622256B2 JPH0622256B2 (en) | 1994-03-23 |
Family
ID=15590060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63154701A Expired - Lifetime JPH0622256B2 (en) | 1988-06-24 | 1988-06-24 | Method for manufacturing semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0622256B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5035505A (en) * | 1989-08-02 | 1991-07-30 | Hitachi, Ltd. | Atomic absorption spectroscopy photometer |
| JPH03266081A (en) * | 1990-03-16 | 1991-11-27 | Fujitsu Ltd | Printed circuit board mount designing device |
| JPH0541503A (en) * | 1991-06-21 | 1993-02-19 | Nec Ic Microcomput Syst Ltd | Manufacture of semiconductor device by master slice system |
| US5252507A (en) * | 1990-03-30 | 1993-10-12 | Tactical Fabs, Inc. | Very high density wafer scale device architecture |
| US5315130A (en) * | 1990-03-30 | 1994-05-24 | Tactical Fabs, Inc. | Very high density wafer scale device architecture |
| US5568254A (en) * | 1992-01-31 | 1996-10-22 | Shimadzu Corporation | Low pressure discharge tube and atomic absorption spectrophotometer using the same |
| US11724736B2 (en) | 2011-04-19 | 2023-08-15 | Ford Global Technologies, Llc | Trailer backup assist curvature control |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51139286A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Multi-layer wiring pattern |
| JPS5323570A (en) * | 1976-08-18 | 1978-03-04 | Mitsubishi Electric Corp | Forming method of minute conductive regions to semicond uctor element chip surface |
| JPS5325382A (en) * | 1976-08-23 | 1978-03-09 | Hitachi Ltd | Wiring method of lsi |
| JPS5366074U (en) * | 1976-10-29 | 1978-06-03 | ||
| JPS53101980A (en) * | 1977-02-17 | 1978-09-05 | Fujitsu Ltd | Semiconductor device |
| JPS55143061A (en) * | 1979-04-25 | 1980-11-08 | Hitachi Ltd | Integrated circuit |
| JPS5619634A (en) * | 1979-07-27 | 1981-02-24 | Hitachi Ltd | Semiconductor device |
-
1988
- 1988-06-24 JP JP63154701A patent/JPH0622256B2/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51139286A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Multi-layer wiring pattern |
| JPS5323570A (en) * | 1976-08-18 | 1978-03-04 | Mitsubishi Electric Corp | Forming method of minute conductive regions to semicond uctor element chip surface |
| JPS5325382A (en) * | 1976-08-23 | 1978-03-09 | Hitachi Ltd | Wiring method of lsi |
| JPS5366074U (en) * | 1976-10-29 | 1978-06-03 | ||
| JPS53101980A (en) * | 1977-02-17 | 1978-09-05 | Fujitsu Ltd | Semiconductor device |
| JPS55143061A (en) * | 1979-04-25 | 1980-11-08 | Hitachi Ltd | Integrated circuit |
| JPS5619634A (en) * | 1979-07-27 | 1981-02-24 | Hitachi Ltd | Semiconductor device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5035505A (en) * | 1989-08-02 | 1991-07-30 | Hitachi, Ltd. | Atomic absorption spectroscopy photometer |
| JPH03266081A (en) * | 1990-03-16 | 1991-11-27 | Fujitsu Ltd | Printed circuit board mount designing device |
| US5252507A (en) * | 1990-03-30 | 1993-10-12 | Tactical Fabs, Inc. | Very high density wafer scale device architecture |
| US5315130A (en) * | 1990-03-30 | 1994-05-24 | Tactical Fabs, Inc. | Very high density wafer scale device architecture |
| US5514884A (en) * | 1990-03-30 | 1996-05-07 | Tactical Fabs, Inc. | Very high density wafer scale device architecture |
| JPH0541503A (en) * | 1991-06-21 | 1993-02-19 | Nec Ic Microcomput Syst Ltd | Manufacture of semiconductor device by master slice system |
| US5568254A (en) * | 1992-01-31 | 1996-10-22 | Shimadzu Corporation | Low pressure discharge tube and atomic absorption spectrophotometer using the same |
| US11724736B2 (en) | 2011-04-19 | 2023-08-15 | Ford Global Technologies, Llc | Trailer backup assist curvature control |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0622256B2 (en) | 1994-03-23 |
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