JPS562636A - Inactivation method of surface of semiconductor - Google Patents

Inactivation method of surface of semiconductor

Info

Publication number
JPS562636A
JPS562636A JP7821279A JP7821279A JPS562636A JP S562636 A JPS562636 A JP S562636A JP 7821279 A JP7821279 A JP 7821279A JP 7821279 A JP7821279 A JP 7821279A JP S562636 A JPS562636 A JP S562636A
Authority
JP
Japan
Prior art keywords
film
oxide film
semiconductor
treated
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7821279A
Other languages
Japanese (ja)
Inventor
Katsumi Miyauchi
Maa Tsuoopin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7821279A priority Critical patent/JPS562636A/en
Publication of JPS562636A publication Critical patent/JPS562636A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To inactivate the surface of a semiconductor made of compound by coating silica emulsion on the surface of the semiconductor, heating it, and forming an oxide film having preferable broundary properties and insulating property. CONSTITUTION:After purifying the surface of a GaAs substrate, silica emulsion (containing silica, its organic compound as bases in an alcoholic solution) is rotatably coated on the substrate in a dry atmosphere. The solution is diluted with alcohol or the rotating speed is altered to vary the thickness of the oxide film. The oxide film thus formed is heat treated at 160, 450 and 700 deg.C in dry N2 to densify the oxide (SiO2) film. The densifying temperature is preferably 600-800 deg.C. Finally, when it is treated at 500 deg.C in 2%-H2+98%-N2, the SiO2 film becomes preferable characteristics. Aluminum is evaporated thereon, the back surface of the substrate is cleaned, aluminum is then evaporated, and it is treated at 450 deg.C in 2%-H2+98%-N2. Then, the properties in the boundary between the insulating film and the semicondcutor can be improved. According to this method, it can be simply inactivated on the surface as compared with the conventional process.
JP7821279A 1979-06-22 1979-06-22 Inactivation method of surface of semiconductor Pending JPS562636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7821279A JPS562636A (en) 1979-06-22 1979-06-22 Inactivation method of surface of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7821279A JPS562636A (en) 1979-06-22 1979-06-22 Inactivation method of surface of semiconductor

Publications (1)

Publication Number Publication Date
JPS562636A true JPS562636A (en) 1981-01-12

Family

ID=13655733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7821279A Pending JPS562636A (en) 1979-06-22 1979-06-22 Inactivation method of surface of semiconductor

Country Status (1)

Country Link
JP (1) JPS562636A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58144182U (en) * 1982-03-23 1983-09-28 積水化学工業株式会社 Synthetic resin pipe fittings
US4552869A (en) * 1981-08-12 1985-11-12 A. Nattermann & Cie Gmbh O-Alkyl-O-carbamoylglycerophosphocholines and the use for treating hypertension
JPH01202826A (en) * 1987-12-28 1989-08-15 Dow Corning Corp Method of forming ceramic coating on substrate
FR2852946A1 (en) * 2003-03-31 2004-10-01 Rhodia Chimie Sa EMULSION COMPRISING AMPHIPHILIC SILICA PARTICLES AND PROCESS FOR PREPARING THE SAME

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4552869A (en) * 1981-08-12 1985-11-12 A. Nattermann & Cie Gmbh O-Alkyl-O-carbamoylglycerophosphocholines and the use for treating hypertension
JPS58144182U (en) * 1982-03-23 1983-09-28 積水化学工業株式会社 Synthetic resin pipe fittings
JPH01202826A (en) * 1987-12-28 1989-08-15 Dow Corning Corp Method of forming ceramic coating on substrate
FR2852946A1 (en) * 2003-03-31 2004-10-01 Rhodia Chimie Sa EMULSION COMPRISING AMPHIPHILIC SILICA PARTICLES AND PROCESS FOR PREPARING THE SAME
WO2004094310A3 (en) * 2003-03-31 2005-01-20 Rhodia Chimie Sa Emulsion containing amphiphile silica particles and method for the production thereof

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