JPS5568652A - Manufacturing method of semiconductor film - Google Patents

Manufacturing method of semiconductor film

Info

Publication number
JPS5568652A
JPS5568652A JP14116378A JP14116378A JPS5568652A JP S5568652 A JPS5568652 A JP S5568652A JP 14116378 A JP14116378 A JP 14116378A JP 14116378 A JP14116378 A JP 14116378A JP S5568652 A JPS5568652 A JP S5568652A
Authority
JP
Japan
Prior art keywords
film
semiconductor film
amorphous
single crystal
harmful substances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14116378A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14116378A priority Critical patent/JPS5568652A/en
Publication of JPS5568652A publication Critical patent/JPS5568652A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To obtain a semiconductor film which contains no harmful substances automatically doped, by providing an amorphous semiconductor film on the surface of an dielectric piece and heating the amorphous semiconductor film to change it into single crystal.
CONSTITUTION: After the surface of a sapphire substrate 1 is cleaned up, SiH4 is made into plasma at a relatively low temperature of about 800°C to produce an amorphous Si film 2. At that temperature, no harmful substances are automatically doped from the substrate 1 into the film 2. The surface of the film is heated like pulsation to change the amorphous Si film 2 into a single crystal Si film 3. No harmful substances such as aluminum are automatically doped from the sapphire into the single crystal Si film 3. Therefore, a leakage current is very little when a pn-junction 4 is provided. SiO2, Si3N4 or the like may be used as a dielectric substance instead of the sapphire.
COPYRIGHT: (C)1980,JPO&Japio
JP14116378A 1978-11-17 1978-11-17 Manufacturing method of semiconductor film Pending JPS5568652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14116378A JPS5568652A (en) 1978-11-17 1978-11-17 Manufacturing method of semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14116378A JPS5568652A (en) 1978-11-17 1978-11-17 Manufacturing method of semiconductor film

Publications (1)

Publication Number Publication Date
JPS5568652A true JPS5568652A (en) 1980-05-23

Family

ID=15285592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14116378A Pending JPS5568652A (en) 1978-11-17 1978-11-17 Manufacturing method of semiconductor film

Country Status (1)

Country Link
JP (1) JPS5568652A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975670A (en) * 1982-10-25 1984-04-28 Seiko Epson Corp Method for manufacturing thin film semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975670A (en) * 1982-10-25 1984-04-28 Seiko Epson Corp Method for manufacturing thin film semiconductor devices

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