JPS5626432A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5626432A
JPS5626432A JP10305179A JP10305179A JPS5626432A JP S5626432 A JPS5626432 A JP S5626432A JP 10305179 A JP10305179 A JP 10305179A JP 10305179 A JP10305179 A JP 10305179A JP S5626432 A JPS5626432 A JP S5626432A
Authority
JP
Japan
Prior art keywords
layer
covering
silver
diffused
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10305179A
Other languages
Japanese (ja)
Other versions
JPS5855654B2 (en
Inventor
Yoshihiko Mizushima
Akitsu Takeda
Akira Yoshikawa
Osamu Ochi
Tomoko Kuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54103051A priority Critical patent/JPS5855654B2/en
Priority to US06/174,275 priority patent/US4350541A/en
Priority to FR8017774A priority patent/FR2463509B1/en
Priority to DE3030660A priority patent/DE3030660C2/en
Publication of JPS5626432A publication Critical patent/JPS5626432A/en
Publication of JPS5855654B2 publication Critical patent/JPS5855654B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a highly accurate thermal diffusion layer by forming a layer which contains a desired conductive type impurities and whose main component is Se on a semiconductor substrate, forming a pattern by an inorganic resist mask of silver and the like, and covering it by a heat resisting layer. CONSTITUTION:On an N type semiconductor substrate 1, are stacked a noncrystal chalcogenide layer 3 which contains P type impurities and whose component is Se70 Ge30 and a layer 4 comprising silver, silver chalcogenide, or halide, thereby a highly sensitive photoresist film 5 is formed. A highly accurate layer 7 is formed by exposing and developing a desired pattern, and a P type layer 9 is formed by covering an SiO2 layer 8 and heat treatment. Then, the layers 8 and 7 are removed. In this case, depending on the material of the covering layer 8, the material of the layer 7 is resolved into the layer 8 and dispeared. Therefore, the layer 7 need not be removed. In this constitution, the impurities in the layer 7 are not diffused to the unnecessary outer portion, and diffused into the substrate effectively, the desired concentration can be readily obtained.
JP54103051A 1979-08-13 1979-08-13 Manufacturing method for semiconductor devices Expired JPS5855654B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP54103051A JPS5855654B2 (en) 1979-08-13 1979-08-13 Manufacturing method for semiconductor devices
US06/174,275 US4350541A (en) 1979-08-13 1980-07-31 Doping from a photoresist layer
FR8017774A FR2463509B1 (en) 1979-08-13 1980-08-12 PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES AND DEVICES OBTAINED THEREBY
DE3030660A DE3030660C2 (en) 1979-08-13 1980-08-13 Method for the selective diffusion of a dopant into a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54103051A JPS5855654B2 (en) 1979-08-13 1979-08-13 Manufacturing method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5626432A true JPS5626432A (en) 1981-03-14
JPS5855654B2 JPS5855654B2 (en) 1983-12-10

Family

ID=14343865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54103051A Expired JPS5855654B2 (en) 1979-08-13 1979-08-13 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5855654B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934018A (en) * 1972-07-31 1974-03-29
JPS4952967A (en) * 1972-09-25 1974-05-23

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934018A (en) * 1972-07-31 1974-03-29
JPS4952967A (en) * 1972-09-25 1974-05-23

Also Published As

Publication number Publication date
JPS5855654B2 (en) 1983-12-10

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