JPS5626439A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5626439A
JPS5626439A JP10172679A JP10172679A JPS5626439A JP S5626439 A JPS5626439 A JP S5626439A JP 10172679 A JP10172679 A JP 10172679A JP 10172679 A JP10172679 A JP 10172679A JP S5626439 A JPS5626439 A JP S5626439A
Authority
JP
Japan
Prior art keywords
film
insulating film
manufacture
semiconductor device
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10172679A
Other languages
Japanese (ja)
Inventor
Masahiro Suzaki
Minoru Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP10172679A priority Critical patent/JPS5626439A/en
Publication of JPS5626439A publication Critical patent/JPS5626439A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To completely eliminate an unncessary metal film with high safety by opening the insulating film on a semiconductor substrate and by covering the insulating film with a metal film wherein etching removal is made by using plasma irradiation after forming an intermetallic compound. CONSTITUTION:The insulating film 2 on an Si wafer 1 providing transistors and others is opened at 3 and Pt4 is formed on the insulating film 2. A Pt-Si5 is made by heating and the film 4 will be come off from a substrate by applying distortion to the Pt film 4 except a region 5 by irradiating O2 plasma. In this composition, high safe work will be done without using chemicals and Pt will also be collected.
JP10172679A 1979-08-09 1979-08-09 Manufacture of semiconductor device Pending JPS5626439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10172679A JPS5626439A (en) 1979-08-09 1979-08-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10172679A JPS5626439A (en) 1979-08-09 1979-08-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5626439A true JPS5626439A (en) 1981-03-14

Family

ID=14308283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10172679A Pending JPS5626439A (en) 1979-08-09 1979-08-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5626439A (en)

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