JPS5629232A - Pattern forming material - Google Patents

Pattern forming material

Info

Publication number
JPS5629232A
JPS5629232A JP10352179A JP10352179A JPS5629232A JP S5629232 A JPS5629232 A JP S5629232A JP 10352179 A JP10352179 A JP 10352179A JP 10352179 A JP10352179 A JP 10352179A JP S5629232 A JPS5629232 A JP S5629232A
Authority
JP
Japan
Prior art keywords
copolymer
tert
formula
ultraviolet rays
butyl methacrylate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10352179A
Other languages
Japanese (ja)
Inventor
Yasuhiro Yoneda
Tateo Kitamura
Jiro Naito
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10352179A priority Critical patent/JPS5629232A/en
Publication of JPS5629232A publication Critical patent/JPS5629232A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a material forming the pattern of a circuit such as an integrated circuit and having high sensitivity and high resolution by using a copolymer contg. a specified percentage of tert-butyl methacrylate units as a resist material against deep ultraviolet rays.
CONSTITUTION: A copolymer contg. 20W95% tert-butyl methacrylate units represented by formula I is used as a resist material. This copolymer is represented by formula II. This resist is fit for lithography with deep ultraviolet rays of 180W 350nm wavelengths and has superior resolution and sensitivity with a small quantity of exposure in the formation of a ≤1μ minute pattern.
COPYRIGHT: (C)1981,JPO&Japio
JP10352179A 1979-08-16 1979-08-16 Pattern forming material Pending JPS5629232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10352179A JPS5629232A (en) 1979-08-16 1979-08-16 Pattern forming material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10352179A JPS5629232A (en) 1979-08-16 1979-08-16 Pattern forming material

Publications (1)

Publication Number Publication Date
JPS5629232A true JPS5629232A (en) 1981-03-24

Family

ID=14356230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10352179A Pending JPS5629232A (en) 1979-08-16 1979-08-16 Pattern forming material

Country Status (1)

Country Link
JP (1) JPS5629232A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH03113449A (en) * 1989-09-27 1991-05-14 Agency Of Ind Science & Technol Resin composition sensitive to visible light

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0102450A3 (en) * 1982-08-23 1986-10-15 International Business Machines Corporation Resist compositions
JPH03113449A (en) * 1989-09-27 1991-05-14 Agency Of Ind Science & Technol Resin composition sensitive to visible light

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