JPS5630730A - Supporting electrode of semiconductor element - Google Patents

Supporting electrode of semiconductor element

Info

Publication number
JPS5630730A
JPS5630730A JP10603679A JP10603679A JPS5630730A JP S5630730 A JPS5630730 A JP S5630730A JP 10603679 A JP10603679 A JP 10603679A JP 10603679 A JP10603679 A JP 10603679A JP S5630730 A JPS5630730 A JP S5630730A
Authority
JP
Japan
Prior art keywords
supporting electrode
sintered material
semiconductor element
electrode
thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10603679A
Other languages
Japanese (ja)
Other versions
JPS6026297B2 (en
Inventor
Hideo Koizumi
Yoichi Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP54106036A priority Critical patent/JPS6026297B2/en
Publication of JPS5630730A publication Critical patent/JPS5630730A/en
Publication of JPS6026297B2 publication Critical patent/JPS6026297B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders

Landscapes

  • Powder Metallurgy (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To obtain the electrode with excellent characteristics in thermal expansion coefficient, wetting property with a solder material and thermal and electrical conductivity by a method wherein the supporting electrode is formed with an Mo sintered material of a prescribed density. CONSTITUTION:The supporting electrode of the semiconductor element is formed using the Mo sintered material of 9.5-10.0g/cm<3> density. When a spot welding is performed on the supporting electrode 1 of the Mo sintered material and a lead wire 2 of Zr-Cu, a particularly strong tensile break strength is obtained at the sintered material whose density is 9.5-10.0g/cm<3>. Also, the thermal expansion coefficient of the Mo sintered material is closely resenbling to that of an Mo rod, and it is suitable for the semiconductor supporting electrode. Besides, it has excellent characteristics in thermal and electrical conductivity and also has an advantage of an excellent wetting property with a solder material.
JP54106036A 1979-08-22 1979-08-22 Semiconductor element support electrode Expired JPS6026297B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54106036A JPS6026297B2 (en) 1979-08-22 1979-08-22 Semiconductor element support electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54106036A JPS6026297B2 (en) 1979-08-22 1979-08-22 Semiconductor element support electrode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58030936A Division JPS58157903A (en) 1983-02-28 1983-02-28 Production of supporting electrode for semiconductor element

Publications (2)

Publication Number Publication Date
JPS5630730A true JPS5630730A (en) 1981-03-27
JPS6026297B2 JPS6026297B2 (en) 1985-06-22

Family

ID=14423405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54106036A Expired JPS6026297B2 (en) 1979-08-22 1979-08-22 Semiconductor element support electrode

Country Status (1)

Country Link
JP (1) JPS6026297B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61132997A (en) * 1984-11-30 1986-06-20 ヒューレット・パッカード・カンパニー Capacitive load driver
EP0704834A1 (en) 1994-09-28 1996-04-03 Nec Corporation Driver circuit for dot matrix AC plasma display panel of memory type

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61132997A (en) * 1984-11-30 1986-06-20 ヒューレット・パッカード・カンパニー Capacitive load driver
EP0704834A1 (en) 1994-09-28 1996-04-03 Nec Corporation Driver circuit for dot matrix AC plasma display panel of memory type

Also Published As

Publication number Publication date
JPS6026297B2 (en) 1985-06-22

Similar Documents

Publication Publication Date Title
JPS5630730A (en) Supporting electrode of semiconductor element
ES8402676A1 (en) Glass-molded semiconductor device.
JPS57111056A (en) Semiconductor device
SE7907615L (en) ELECTRICAL FOR ELECTRIC RESISTANCE WELDING
JPS53110942A (en) Low melting point autogeneous hard solder material
JPS5737860A (en) Enclosure for semiconductor device
JPS53146340A (en) Heating element
JPS55143743A (en) Impregnated cathode structure
JPS53124072A (en) Semiconductor device
JPS55153686A (en) Electrode for welding contact material
JPS52132789A (en) Manufacture for supersonic vibrator
JPS5586688A (en) Welding method of pipe materials
JPS55150247A (en) Parallel gap electrode and process for welding using the same
JPS5588362A (en) Semiconductor device
JPS5588995A (en) Welding method of tube body
JPS55166866A (en) Manufacture of electrode plate for alkaline storage battery
DE58908185D1 (en) Soldering device with at least one clip electrode that can be heated by electrical resistance heat.
JPS5673456A (en) Manufacture of semiconductor device
JPS57115983A (en) Resistance welding method
JPS5417664A (en) Manufacture of electrode for semiconductor element
JPS56131093A (en) Method and device for reducing influence of welding heat
JPS57118649A (en) Device with which tip of metal wire is spherically formed
JPS5457961A (en) Semiconductor device
JPS5792842A (en) Manufacture of semiconductor element
JPS5494349A (en) Heat sensitive recording method