JPS5636152A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5636152A
JPS5636152A JP11199779A JP11199779A JPS5636152A JP S5636152 A JPS5636152 A JP S5636152A JP 11199779 A JP11199779 A JP 11199779A JP 11199779 A JP11199779 A JP 11199779A JP S5636152 A JPS5636152 A JP S5636152A
Authority
JP
Japan
Prior art keywords
resistance
openings
whose
mask
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11199779A
Other languages
Japanese (ja)
Inventor
Yoshio Ueki
Norio Suzuki
Tadaharu Tsuyuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11199779A priority Critical patent/JPS5636152A/en
Publication of JPS5636152A publication Critical patent/JPS5636152A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form a plurality of regions, whose specific resistance differs, and make up a plurality of resistance elements, whose resistance values differ each other, by a method wherein an oxide film mask is built up on a semiconductor substrate, a polyimide group high-molecular resin film mask is formed on the oxide film mask, and the ions of impurities are injected. CONSTITUTION:An oxide film mask 2 of SiO2 is made up on a semiconductor substrate 1 such as Si. Openings such as three openings 2a, 2b, 2c are formed to the mask. A film such as a polyimide-isoindoloquinazolinedione film 3 is applied on the openings. An opening 3a is made up to the resin film 3 on the openings 2a, ions are injected, and the first resistance region 4a is formed. The second and third resistance regions 4b, 4c are successively built up in the same manner. Thereby, resistance elements, whose sheet resistance differs, each other that is, whose resistance values differ, can be formed highly accurately and positively.
JP11199779A 1979-08-31 1979-08-31 Manufacture of semiconductor device Pending JPS5636152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11199779A JPS5636152A (en) 1979-08-31 1979-08-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11199779A JPS5636152A (en) 1979-08-31 1979-08-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5636152A true JPS5636152A (en) 1981-04-09

Family

ID=14575355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11199779A Pending JPS5636152A (en) 1979-08-31 1979-08-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5636152A (en)

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