JPS563679A - Formation of metallic pattern - Google Patents

Formation of metallic pattern

Info

Publication number
JPS563679A
JPS563679A JP7989479A JP7989479A JPS563679A JP S563679 A JPS563679 A JP S563679A JP 7989479 A JP7989479 A JP 7989479A JP 7989479 A JP7989479 A JP 7989479A JP S563679 A JPS563679 A JP S563679A
Authority
JP
Japan
Prior art keywords
aluminum
substrate
photosensitive resin
mask
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7989479A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Kouji Harada
Haruhiko Abe
Masahiro Yoneda
Yoshikazu Obayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7989479A priority Critical patent/JPS563679A/en
Publication of JPS563679A publication Critical patent/JPS563679A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To form a micro-pattern, by etching metal such as aluminum by using metallic oxide such as aluminum oxide as a mask.
CONSTITUTION: On a substrate 1, on which a wiring pattern is made, is formed metallic material (aluminum) 2 which constitutes the wiring. Then a glass mask is placed on the substrate in such a way that photosensitive resin 3 is left on the range to be etched, and the substrate is exposed and developed. Subsequently, aluminum oxide coating 4 is formed on the surface of the exposed aluminum 2 by using the photosensitive resin 3 as a mask by oxygen-ion implantation etc. After that, the photosensitive resin 3 is removed, and aluminum 2 is removed by dry etching, the aluminum oxide coating 4 being removed separately. The etching is achieved in plasmatic gas of CCl4 at a pressure of about 0.75 Torr by applying high frequency wave of 13.5MHz.
COPYRIGHT: (C)1981,JPO&Japio
JP7989479A 1979-06-22 1979-06-22 Formation of metallic pattern Pending JPS563679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7989479A JPS563679A (en) 1979-06-22 1979-06-22 Formation of metallic pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7989479A JPS563679A (en) 1979-06-22 1979-06-22 Formation of metallic pattern

Publications (1)

Publication Number Publication Date
JPS563679A true JPS563679A (en) 1981-01-14

Family

ID=13702972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7989479A Pending JPS563679A (en) 1979-06-22 1979-06-22 Formation of metallic pattern

Country Status (1)

Country Link
JP (1) JPS563679A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117124A (en) * 1982-12-24 1984-07-06 Fujitsu Ltd Formation of wiring pattern
JPS62157799A (en) * 1985-12-27 1987-07-13 松下電器産業株式会社 How to process holes in ceramic green sheets
KR100624461B1 (en) 2005-02-25 2006-09-19 삼성전자주식회사 Nanowires and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117124A (en) * 1982-12-24 1984-07-06 Fujitsu Ltd Formation of wiring pattern
JPS62157799A (en) * 1985-12-27 1987-07-13 松下電器産業株式会社 How to process holes in ceramic green sheets
KR100624461B1 (en) 2005-02-25 2006-09-19 삼성전자주식회사 Nanowires and its manufacturing method

Similar Documents

Publication Publication Date Title
JPS5548935A (en) Forming of electrode pattern
JPS5593225A (en) Forming method of minute pattern
JPS5620165A (en) Formation of pattern
JPS5669835A (en) Method for forming thin film pattern
JPS556844A (en) Method of formating wiring pattern
JPS52119172A (en) Forming method of fine pattern
JPS5461478A (en) Chromium plate
JPS57198632A (en) Fine pattern formation
JPS5496369A (en) Mask forming method
JPS54162460A (en) Electrode forming method
JPS5635774A (en) Dry etching method
JPS5533035A (en) Forming of resist pattern shaped like inverted truncated pyramid
JPS53112671A (en) Forming method for pattern
JPS53113730A (en) Metallic pattern forming method
JPS5427367A (en) Manufacture of microwave circuit pattern
JPS55107781A (en) Etching method for metal film
JPS57208143A (en) Method for forming fine pattern
JPS5527639A (en) Photo-resist pattern forming method
JPS54107277A (en) Production of semiconductor device
JPS5522833A (en) Manufacturing of semiconductor device
JPS57192264A (en) Method of etching
JPS5246775A (en) Method of forming photo mask
JPS559481A (en) Method of forming fine pattern
JPS57118641A (en) Lifting-off method
JPS5741638A (en) Photomask for electron beam