JPS559481A - Method of forming fine pattern - Google Patents
Method of forming fine patternInfo
- Publication number
- JPS559481A JPS559481A JP8314178A JP8314178A JPS559481A JP S559481 A JPS559481 A JP S559481A JP 8314178 A JP8314178 A JP 8314178A JP 8314178 A JP8314178 A JP 8314178A JP S559481 A JPS559481 A JP S559481A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- aluminium
- pattern
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 5
- 239000004411 aluminium Substances 0.000 abstract 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000007853 buffer solution Substances 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To provide a fine space of aluminium by superimposing the first and second pattern space control layers on a substrate, etching the first layer to allow its lower side face to overhang, selectively removing the second layer, and coating aluminium on the substrate exposed under the overhung layer.
CONSTITUTION: On a substrate 1 are coated the first and second pattern space control layers comprising a SiO2 film 2 and a Cr/Au film 3 respectively, and on the film 3 are formed the photoresist film masks 4 having a predetermined spacing each other. The substrate 1 is inserted into an ion etching apparatus to etch it using an argon gas and to form a mountain skirt-shaped film 3 extended under the mask 4. Subsequently, the film 2 is removed deep in the skirt of the film 3 by the chemical etching using a buffer solution of hydrofluoric acid. In such a situation, it is inserted into evaparator to form an aluminium pattern 5 on the substrate portion exposed between the adfacent skirts. Finally, the films 2 and 3, masks 4, and aluminium films 6 are removed leaving a space of aluminium pattern 5 on the substrate.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8314178A JPS559481A (en) | 1978-07-07 | 1978-07-07 | Method of forming fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8314178A JPS559481A (en) | 1978-07-07 | 1978-07-07 | Method of forming fine pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS559481A true JPS559481A (en) | 1980-01-23 |
Family
ID=13793921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8314178A Pending JPS559481A (en) | 1978-07-07 | 1978-07-07 | Method of forming fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS559481A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927206U (en) * | 1982-08-11 | 1984-02-20 | 西川ゴム工業株式会社 | Expansion joint structure for joints |
| JPH01239934A (en) * | 1988-03-22 | 1989-09-25 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Formation of fine pattern |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513880A (en) * | 1990-09-20 | 1993-01-22 | Seiko Epson Corp | Semiconductor laser manufacturing method |
-
1978
- 1978-07-07 JP JP8314178A patent/JPS559481A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513880A (en) * | 1990-09-20 | 1993-01-22 | Seiko Epson Corp | Semiconductor laser manufacturing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927206U (en) * | 1982-08-11 | 1984-02-20 | 西川ゴム工業株式会社 | Expansion joint structure for joints |
| JPH01239934A (en) * | 1988-03-22 | 1989-09-25 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Formation of fine pattern |
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