JPS5637647A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5637647A JPS5637647A JP11331279A JP11331279A JPS5637647A JP S5637647 A JPS5637647 A JP S5637647A JP 11331279 A JP11331279 A JP 11331279A JP 11331279 A JP11331279 A JP 11331279A JP S5637647 A JPS5637647 A JP S5637647A
- Authority
- JP
- Japan
- Prior art keywords
- al2o3
- wirings
- mask
- anode oxidation
- nonporous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 4
- 229910052593 corundum Inorganic materials 0.000 abstract 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 4
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the Al wirings with high stability and reproducibility by a method wherein an Al film is applied on an insulative film including openings and laid upon a substrate, nonporous Al2O3 is formed by anode oxidation with a mask made of Si or Si compound, and then porous Al2O3 is farmed after removing the mask. CONSTITUTION:An insulative film 2 including a window 3, Al 4 and Si 8 are laid upon a substrate 1 by turns and the Si 8 is etched under a regist mask 7 by using plasma. Nonporous Al2O3 6 is formed by anode oxidation. Then, after removing the regist 7 and the Si 8 totally, the remaining Al 4 is converted into porous Al2O3 5 by anode oxidation again, so that wirings are obtained. This method makes it possible to ease working conditions and controls, prevent the generation of failures and thus form the wirings with high stability and reproducibility.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11331279A JPS5637647A (en) | 1979-09-04 | 1979-09-04 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11331279A JPS5637647A (en) | 1979-09-04 | 1979-09-04 | Manufacturing of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5637647A true JPS5637647A (en) | 1981-04-11 |
Family
ID=14609034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11331279A Pending JPS5637647A (en) | 1979-09-04 | 1979-09-04 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637647A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4766093A (en) * | 1984-07-30 | 1988-08-23 | International Business Machines Corp. | Chemically formed self-aligned structure and wave guide |
-
1979
- 1979-09-04 JP JP11331279A patent/JPS5637647A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4766093A (en) * | 1984-07-30 | 1988-08-23 | International Business Machines Corp. | Chemically formed self-aligned structure and wave guide |
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