JPS5772333A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5772333A
JPS5772333A JP55148582A JP14858280A JPS5772333A JP S5772333 A JPS5772333 A JP S5772333A JP 55148582 A JP55148582 A JP 55148582A JP 14858280 A JP14858280 A JP 14858280A JP S5772333 A JPS5772333 A JP S5772333A
Authority
JP
Japan
Prior art keywords
layer
film
amorphous
oxidized
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148582A
Other languages
Japanese (ja)
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55148582A priority Critical patent/JPS5772333A/en
Publication of JPS5772333A publication Critical patent/JPS5772333A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve quality of a silicon dioxide film by a method wherein after ions are injected into a polycrystalline silicon layer by making said layer amorphous, the amorphous silicon layer is oxidized to form into an insulating film. CONSTITUTION:A polycrystalline silicon layer 12 having film thickness of about 7,000mum is deposited on the upper surface of an insulating film 11 on a semiconductor substrat 10. A photoresist film is applied on a layer 12, and a resist film mask 13 is formed. Next the exposed part of the layer 12 is removed by etching, and further the mask 13 is removed to allow the layer 12 of the first layer to be formed. After that, argon ions are injected from the surface, and the surface of the layer 12 is made to be an amorphous layer 12'. And, the layer 12' is oxidized by oxidation treatment at high temperature of about 1,000 deg.C, thereby allowing a silicon dioxide film 14 having film thickness of about 2,000-4,000Angstrom to be formed.
JP55148582A 1980-10-23 1980-10-23 Manufacture of semiconductor device Pending JPS5772333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148582A JPS5772333A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148582A JPS5772333A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5772333A true JPS5772333A (en) 1982-05-06

Family

ID=15455960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148582A Pending JPS5772333A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772333A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931068A (en) * 1982-08-13 1984-02-18 Seiko Epson Corp Method for manufacturing semiconductor integrated circuit device
JPS59127841A (en) * 1983-01-12 1984-07-23 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS624375A (en) * 1985-06-29 1987-01-10 Sony Corp Semiconductor device
JPS63502470A (en) * 1986-02-25 1988-09-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニ− Method for manufacturing a device having a thin dielectric layer
JPH02111035A (en) * 1988-10-20 1990-04-24 Fuji Xerox Co Ltd Manufacture of polysilicon thin-film transistor
JP2014220364A (en) * 2013-05-08 2014-11-20 株式会社豊田自動織機 Process of manufacturing semiconductor substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991189A (en) * 1972-12-29 1974-08-30
JPS5349970A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991189A (en) * 1972-12-29 1974-08-30
JPS5349970A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931068A (en) * 1982-08-13 1984-02-18 Seiko Epson Corp Method for manufacturing semiconductor integrated circuit device
JPS59127841A (en) * 1983-01-12 1984-07-23 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS624375A (en) * 1985-06-29 1987-01-10 Sony Corp Semiconductor device
JPS63502470A (en) * 1986-02-25 1988-09-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニ− Method for manufacturing a device having a thin dielectric layer
JPH02111035A (en) * 1988-10-20 1990-04-24 Fuji Xerox Co Ltd Manufacture of polysilicon thin-film transistor
JP2014220364A (en) * 2013-05-08 2014-11-20 株式会社豊田自動織機 Process of manufacturing semiconductor substrate

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