JPS5637663A - Capacitor - Google Patents

Capacitor

Info

Publication number
JPS5637663A
JPS5637663A JP11389079A JP11389079A JPS5637663A JP S5637663 A JPS5637663 A JP S5637663A JP 11389079 A JP11389079 A JP 11389079A JP 11389079 A JP11389079 A JP 11389079A JP S5637663 A JPS5637663 A JP S5637663A
Authority
JP
Japan
Prior art keywords
film
layer
region
electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11389079A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Shinichi Sato
Masahiko Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11389079A priority Critical patent/JPS5637663A/en
Publication of JPS5637663A publication Critical patent/JPS5637663A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a capacitor having a high durability against alpha rays as used for a semiconductor memory by burying an insulating film in the capacitance region of a semiconductor substrate and obstructing the arrival of electrons or holes generated by the alpha rays to a memory cell. CONSTITUTION:An SiO2 film is coated on the surface of a P type Si substrate, is retained as the SiO2 film 8 only on the region used as a memory capacitance by a phtolithographic process, and is removed on the other portion thereof. Then, a P type layer 7 is epitaxially grown on the entire surface, a polycrystalline Si is formed on the film 8, a monocrystalline Si layer is formed on theportion except the film 8, and an N<+> type region 5 is diffused on a part in the monocrystalline layer. When a first electrode 2 disposed on the film 8 and a second electrode 3 disposed between the film 8 and the region 5 are thereafter formed on the layer 7 while being buried in the SiO2 film 1 by using polycrystalline Si, the film 1 interposed between the electrode 2 and the layer 7 is thinner in thickness than the other.
JP11389079A 1979-09-05 1979-09-05 Capacitor Pending JPS5637663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11389079A JPS5637663A (en) 1979-09-05 1979-09-05 Capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11389079A JPS5637663A (en) 1979-09-05 1979-09-05 Capacitor

Publications (1)

Publication Number Publication Date
JPS5637663A true JPS5637663A (en) 1981-04-11

Family

ID=14623693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11389079A Pending JPS5637663A (en) 1979-09-05 1979-09-05 Capacitor

Country Status (1)

Country Link
JP (1) JPS5637663A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670657A (en) * 1979-11-14 1981-06-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory device
US4788580A (en) * 1985-11-22 1988-11-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory and method of manufacturing the same
US5168366A (en) * 1987-01-27 1992-12-01 Oki Electric Industry Co., Ltd. Dynamic semiconductor memory device comprising a switching transistor and storage capacitor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670657A (en) * 1979-11-14 1981-06-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory device
US4788580A (en) * 1985-11-22 1988-11-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory and method of manufacturing the same
US5168366A (en) * 1987-01-27 1992-12-01 Oki Electric Industry Co., Ltd. Dynamic semiconductor memory device comprising a switching transistor and storage capacitor

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