JPS5637671A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5637671A
JPS5637671A JP11332579A JP11332579A JPS5637671A JP S5637671 A JPS5637671 A JP S5637671A JP 11332579 A JP11332579 A JP 11332579A JP 11332579 A JP11332579 A JP 11332579A JP S5637671 A JPS5637671 A JP S5637671A
Authority
JP
Japan
Prior art keywords
region
coated
film
type
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11332579A
Other languages
Japanese (ja)
Other versions
JPS6333302B2 (en
Inventor
Masanori Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11332579A priority Critical patent/JPS5637671A/en
Publication of JPS5637671A publication Critical patent/JPS5637671A/en
Publication of JPS6333302B2 publication Critical patent/JPS6333302B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the deep intrusion of metal in a semiconductor device by froming an impurity region having the same conductivity type as the surface of a semiconductor region but a density of higher than 3X10<21> pieces/cm<3> in the surface portion of the semiconductor region when mounting an aluminum wiring metal on the surface of the region. CONSTITUTION:An SiO2 film 2 having a sufficient thickness as a mask for an ion implantation is coated on a P type Si substrate 1, and unnecessary portion is etched and removed therefrom. Then, a thin SiO2 film 4 is coated on the portion removed with the film 2, As impurity ions are implanted, the film is driven in, and an N type region 3 having a depth of 0.5mum or the like is formed therein. Thereafter, P impurity ions are implanted to the region at which aluminum electrode is mounted of the region 3, and a region 8 having a density of 3X10<21> pieces/cm<3> or higher and a depth of 0.2-0.3mum is formed therein. Then, an aluminum layer is coated on the entire surface, unnecessary portion is etched and removed, as an electrode wire 7 making contact with the region 8, is annealed at 450 deg.C in N2 atmosphere for 30- 60min, and an ohmic contact having no intrusion of aluminun into the the region 3 can be obtained.
JP11332579A 1979-09-04 1979-09-04 Semiconductor device Granted JPS5637671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11332579A JPS5637671A (en) 1979-09-04 1979-09-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11332579A JPS5637671A (en) 1979-09-04 1979-09-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5637671A true JPS5637671A (en) 1981-04-11
JPS6333302B2 JPS6333302B2 (en) 1988-07-05

Family

ID=14609369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11332579A Granted JPS5637671A (en) 1979-09-04 1979-09-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5637671A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082378A (en) * 1989-09-27 1992-01-21 Hewlett-Packard Company Optical fiber connector and method for its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082378A (en) * 1989-09-27 1992-01-21 Hewlett-Packard Company Optical fiber connector and method for its manufacture

Also Published As

Publication number Publication date
JPS6333302B2 (en) 1988-07-05

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