JPS5748268A - Manufacture of mos semiconductor device - Google Patents

Manufacture of mos semiconductor device

Info

Publication number
JPS5748268A
JPS5748268A JP55122410A JP12241080A JPS5748268A JP S5748268 A JPS5748268 A JP S5748268A JP 55122410 A JP55122410 A JP 55122410A JP 12241080 A JP12241080 A JP 12241080A JP S5748268 A JPS5748268 A JP S5748268A
Authority
JP
Japan
Prior art keywords
gate
film
drain
thickness
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55122410A
Other languages
Japanese (ja)
Inventor
Makoto Haneda
Toshio Okubo
Kazuo Kaneko
Shuji Kobayashi
Ryoichi Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55122410A priority Critical patent/JPS5748268A/en
Publication of JPS5748268A publication Critical patent/JPS5748268A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce resistance of an Mo film and to prevent reduction of power gain of an MOS semiconductor device by a method wherein the upper part of an Mo gate is covered with a polycrystalline silicon layer, and heat treatment is performed. CONSTITUTION:An Si substrate 1 is thermally oxidized to form a gate oxide film 2 on the surface. An Mo film of about 4,500Angstrom thickness is formed on the gate oxide film 2, and photo resist treatment and sputter etching are performed to form the Mo gate 3. Impurity ions are implanted therein for formation of source and drain masking the Mo gate. Si is made to be accumulated by the vapor phase growth method to form the polycrystalline Si layer 11 of about 1,000Angstrom thickness on the whole surface. A PSG film 6 of about 7,000Angstrom thickness is formed in succession. After then annealing is performed in N2 atmosphere at 600 deg.C for 20min or more to make the impurity to be diffused in the Si substrate to form a source 4 and a drain 5. PSG, polycrystalline Si on the surface of the gate part, the source and drain, are etched selectively to expose the contact parts. At this time, the surface of the Mo film is slightly etched to remove the oxide layer on the surface. Then an Al electrode 7 is formed.
JP55122410A 1980-09-05 1980-09-05 Manufacture of mos semiconductor device Pending JPS5748268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55122410A JPS5748268A (en) 1980-09-05 1980-09-05 Manufacture of mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55122410A JPS5748268A (en) 1980-09-05 1980-09-05 Manufacture of mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS5748268A true JPS5748268A (en) 1982-03-19

Family

ID=14835109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55122410A Pending JPS5748268A (en) 1980-09-05 1980-09-05 Manufacture of mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5748268A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166077A (en) * 1981-04-07 1982-10-13 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
WO2006061369A1 (en) * 2004-12-06 2006-06-15 Infineon Technologies Ag Semiconductor device and method of manufacture thereof
US7429777B2 (en) 2005-02-25 2008-09-30 Kabushiki Kaisha Toshiba Semiconductor device with a gate electrode having a laminate structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166077A (en) * 1981-04-07 1982-10-13 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
WO2006061369A1 (en) * 2004-12-06 2006-06-15 Infineon Technologies Ag Semiconductor device and method of manufacture thereof
US7291526B2 (en) 2004-12-06 2007-11-06 Infineon Technologies Ag Semiconductor device and method of manufacture thereof
US7576399B2 (en) 2004-12-06 2009-08-18 Infineon Technologies Ag Semiconductor device and method of manufacture thereof
US7429777B2 (en) 2005-02-25 2008-09-30 Kabushiki Kaisha Toshiba Semiconductor device with a gate electrode having a laminate structure
US8592924B2 (en) 2005-02-25 2013-11-26 Kabushiki Kaisha Toshiba Semiconductor device including gate electrode having a laminate structure and a plug electrically connected thereto

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