JPS5640828A - Production of photomask - Google Patents
Production of photomaskInfo
- Publication number
- JPS5640828A JPS5640828A JP11769579A JP11769579A JPS5640828A JP S5640828 A JPS5640828 A JP S5640828A JP 11769579 A JP11769579 A JP 11769579A JP 11769579 A JP11769579 A JP 11769579A JP S5640828 A JPS5640828 A JP S5640828A
- Authority
- JP
- Japan
- Prior art keywords
- film
- patterns
- thence
- metal
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To improve conductivity and hardness and prevent the metal film from being broken by forming a transparent conductive film and opaque metal film successively on a transparent substrate then forming patterns on the metal thin film by photoetching techniques thence annealing the same after implantation of ions. CONSTITUTION:A transparent conductive film 2 of SnO2, a metal Cr thin film 3 and a chromium oxide film 4 are formed on a glass substrate 1. Thence, photoresist is coated on the film 4, after which it is contact printed by using a master mask and is then developed, whereby resist patterns 5 are formed. Next, with the patterns 5 as a mask, the films 3, 4 are selectively etched away to form predetermined patterns, after which the film 5 is peeled. Thence, antimony ions 6a are implanted to form an ion implanted layer 6 on the film 2. Finally, the thus obtained plate is heated to about 350 deg.C whereby it is annealed. In this way, the optical and electrical characteristics of the conductive film 2 are improved. In addition, the Cr film 3 becomes harder, so that the patterned Cr film 3 is prevented from being broken by the charge which is accumulated in the mask during the use then discharged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11769579A JPS5640828A (en) | 1979-09-11 | 1979-09-11 | Production of photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11769579A JPS5640828A (en) | 1979-09-11 | 1979-09-11 | Production of photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5640828A true JPS5640828A (en) | 1981-04-17 |
Family
ID=14718003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11769579A Pending JPS5640828A (en) | 1979-09-11 | 1979-09-11 | Production of photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5640828A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4411972A (en) * | 1981-12-30 | 1983-10-25 | International Business Machines Corporation | Integrated circuit photomask |
| US4670365A (en) * | 1984-10-29 | 1987-06-02 | Nec Corporation | Photomask and method of fabrication thereof |
-
1979
- 1979-09-11 JP JP11769579A patent/JPS5640828A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4411972A (en) * | 1981-12-30 | 1983-10-25 | International Business Machines Corporation | Integrated circuit photomask |
| US4670365A (en) * | 1984-10-29 | 1987-06-02 | Nec Corporation | Photomask and method of fabrication thereof |
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