JPS5452473A - Forming method for coating for fine pattern - Google Patents

Forming method for coating for fine pattern

Info

Publication number
JPS5452473A
JPS5452473A JP11923677A JP11923677A JPS5452473A JP S5452473 A JPS5452473 A JP S5452473A JP 11923677 A JP11923677 A JP 11923677A JP 11923677 A JP11923677 A JP 11923677A JP S5452473 A JPS5452473 A JP S5452473A
Authority
JP
Japan
Prior art keywords
mask
coating
film
width
fine pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11923677A
Other languages
Japanese (ja)
Inventor
Yaichiro Watakabe
Tadao Kato
Hidefumi Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11923677A priority Critical patent/JPS5452473A/en
Publication of JPS5452473A publication Critical patent/JPS5452473A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To form a coating for a fine pattern with high precision by utilizing a resist mask which has a pattern equivalent to a desired pattern and whose section is formed in a canopy shape.
CONSTITUTION: On glass plate 1, mask coating 2 and positive resist 3 are formed. By electron beam 4, exposure and development are done to form mask 3a with the canopy-shaped section. At this time, adjustments of beam acceleration energy, irradiation amount, resist thickness, exposure degree, material of mask coating 2, and developing method are made so that width difference l2-l1 of the section will be a desired value. Next, film 2 is etched to form mask coating 2 of width l2. Then, vapordepositing coatings 5a and 5b makes the width of film 5b l1. Nest, film 5a is lift off, so that the mask with films 2a and 5a at a gap of approximate 1/2×(l2kll1) can be obtained on substrate 1
COPYRIGHT: (C)1979,JPO&Japio
JP11923677A 1977-10-03 1977-10-03 Forming method for coating for fine pattern Pending JPS5452473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11923677A JPS5452473A (en) 1977-10-03 1977-10-03 Forming method for coating for fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11923677A JPS5452473A (en) 1977-10-03 1977-10-03 Forming method for coating for fine pattern

Publications (1)

Publication Number Publication Date
JPS5452473A true JPS5452473A (en) 1979-04-25

Family

ID=14756323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11923677A Pending JPS5452473A (en) 1977-10-03 1977-10-03 Forming method for coating for fine pattern

Country Status (1)

Country Link
JP (1) JPS5452473A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637630A (en) * 1979-09-05 1981-04-11 Fujitsu Ltd Formation of thin film
JPS5718326A (en) * 1980-07-09 1982-01-30 Mitsubishi Electric Corp Pattern formation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637630A (en) * 1979-09-05 1981-04-11 Fujitsu Ltd Formation of thin film
JPS5718326A (en) * 1980-07-09 1982-01-30 Mitsubishi Electric Corp Pattern formation

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