JPS564151A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS564151A
JPS564151A JP7939379A JP7939379A JPS564151A JP S564151 A JPS564151 A JP S564151A JP 7939379 A JP7939379 A JP 7939379A JP 7939379 A JP7939379 A JP 7939379A JP S564151 A JPS564151 A JP S564151A
Authority
JP
Japan
Prior art keywords
type
layer
thicknesses
junction
electrophotographic receptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7939379A
Other languages
Japanese (ja)
Inventor
Takao Kawamura
Kazuo Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP7939379A priority Critical patent/JPS564151A/en
Publication of JPS564151A publication Critical patent/JPS564151A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0436—Photoconductive layers characterised by having two or more layers or characterised by their composite structure combining organic and inorganic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain the electrophotographic receptor which is superior in heat resistance, surface hardness, dark attenuation characteristics, etc. by providing the P-N junction composed of the amorphous silicon layer formed by a glow discharge decomposition method and further providing an organic semiconductor layer thereon on a conductive substrate. CONSTITUTION:A P-type (or N-type) amorphous silicon (a-Si) intermediate layer 2 of thicknesses about 0.2-5mu and an N-type (or P-type) a-Si photoconductive layer 3 of thicknesses about 0.5-5mu are laminated on a conductive substrate 1 to form a P-N junction and further an N-type (or P-type) organic photosemiconductor layer 4 of thicknesses about 8-50mu is formed thereon to form the electrophotographic receptor. The above-mentioned P-N junction is formed by a P-type a-Si intermediate layer containing boron of e.g. about 10,000ppm or less and an N-type a-Si photoconductor layer containing phosphorus of about 5ppm or less.
JP7939379A 1979-06-22 1979-06-22 Electrophotographic receptor Pending JPS564151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7939379A JPS564151A (en) 1979-06-22 1979-06-22 Electrophotographic receptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7939379A JPS564151A (en) 1979-06-22 1979-06-22 Electrophotographic receptor

Publications (1)

Publication Number Publication Date
JPS564151A true JPS564151A (en) 1981-01-17

Family

ID=13688609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7939379A Pending JPS564151A (en) 1979-06-22 1979-06-22 Electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS564151A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2504697A1 (en) * 1981-04-24 1982-10-29 Canon Kk PHOTOCONDUCTIVE ELEMENT
JPS6318100A (en) * 1986-07-08 1988-01-25 Nisshin Steel Co Ltd Surface treatment of stainless steel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2504697A1 (en) * 1981-04-24 1982-10-29 Canon Kk PHOTOCONDUCTIVE ELEMENT
JPS6318100A (en) * 1986-07-08 1988-01-25 Nisshin Steel Co Ltd Surface treatment of stainless steel

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