JPS5642134B2 - - Google Patents

Info

Publication number
JPS5642134B2
JPS5642134B2 JP4791476A JP4791476A JPS5642134B2 JP S5642134 B2 JPS5642134 B2 JP S5642134B2 JP 4791476 A JP4791476 A JP 4791476A JP 4791476 A JP4791476 A JP 4791476A JP S5642134 B2 JPS5642134 B2 JP S5642134B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4791476A
Other languages
Japanese (ja)
Other versions
JPS51134576A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS51134576A publication Critical patent/JPS51134576A/ja
Publication of JPS5642134B2 publication Critical patent/JPS5642134B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • H10P50/646Chemical etching of Group III-V materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/011Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details

Landscapes

  • Weting (AREA)
  • Led Devices (AREA)
JP4791476A 1975-05-01 1976-04-28 Method of manufacturing semiconductor device Granted JPS51134576A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7505134A NL7505134A (nl) 1975-05-01 1975-05-01 Werkwijze voor het vervaardigen van een half- geleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS51134576A JPS51134576A (en) 1976-11-22
JPS5642134B2 true JPS5642134B2 (2) 1981-10-02

Family

ID=19823678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4791476A Granted JPS51134576A (en) 1975-05-01 1976-04-28 Method of manufacturing semiconductor device

Country Status (9)

Country Link
US (1) US4049488A (2)
JP (1) JPS51134576A (2)
CA (1) CA1059242A (2)
DE (1) DE2616907C2 (2)
FR (1) FR2309977A1 (2)
GB (1) GB1543737A (2)
IT (1) IT1059016B (2)
NL (1) NL7505134A (2)
SE (1) SE409259B (2)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4145478A (en) * 1977-07-28 1979-03-20 Desoto, Inc. Calcium oxide or hydroxide to improve the charge acceptance of electrographic dielectric resins
GB1602498A (en) * 1978-05-31 1981-11-11 Secr Defence Fet devices and their fabrication
GB1603260A (en) * 1978-05-31 1981-11-25 Secr Defence Devices and their fabrication
GB1601059A (en) * 1978-05-31 1981-10-21 Secr Defence Fet devices and their fabrication
JPS55146934A (en) * 1979-05-02 1980-11-15 Agency Of Ind Science & Technol Processing of surface shape of group 3-5 compound semiconductor
JPS55153338A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Surface treatment of semiconductor substrate
GB2145558A (en) * 1983-08-23 1985-03-27 Standard Telephones Cables Ltd Field effect transistor
DE3416991C1 (de) * 1984-05-09 1986-01-30 Philips Patentverwaltung Gmbh, 2000 Hamburg AEtzloesung und Verfahren zum AEtzen von ferrimagnetischen Granatverbindungen
GB2160823B (en) * 1984-06-28 1987-05-28 Stc Plc Semiconductor devices and their fabrication
US4923564A (en) * 1989-08-24 1990-05-08 American Telephone And Telegraph Company Selective etching process
FR2667724B1 (fr) * 1990-10-09 1992-11-27 Thomson Csf Procede de realisation des metallisations d'electrodes d'un transistor.
US5110765A (en) * 1990-11-30 1992-05-05 At&T Bell Laboratories Selective etch for GaAs-containing group III-V compounds

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3772100A (en) * 1971-06-30 1973-11-13 Denki Onkyo Co Ltd Method for forming strips on semiconductor device
US3801391A (en) * 1972-09-25 1974-04-02 Bell Telephone Labor Inc Method for selectively etching alxga1-xas multiplier structures
US3833435A (en) * 1972-09-25 1974-09-03 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3954534A (en) * 1974-10-29 1976-05-04 Xerox Corporation Method of forming light emitting diode array with dome geometry

Also Published As

Publication number Publication date
IT1059016B (it) 1982-05-31
FR2309977A1 (fr) 1976-11-26
DE2616907A1 (de) 1976-11-11
SE409259B (sv) 1979-08-06
FR2309977B1 (2) 1982-08-20
SE7604891L (sv) 1976-11-02
NL7505134A (nl) 1976-11-03
CA1059242A (en) 1979-07-24
US4049488A (en) 1977-09-20
JPS51134576A (en) 1976-11-22
DE2616907C2 (de) 1983-04-14
GB1543737A (en) 1979-04-04

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