JPS5643781A - Semiconductor photodetecting element - Google Patents

Semiconductor photodetecting element

Info

Publication number
JPS5643781A
JPS5643781A JP11908079A JP11908079A JPS5643781A JP S5643781 A JPS5643781 A JP S5643781A JP 11908079 A JP11908079 A JP 11908079A JP 11908079 A JP11908079 A JP 11908079A JP S5643781 A JPS5643781 A JP S5643781A
Authority
JP
Japan
Prior art keywords
semiconductor layer
type
semiconductor
range
xas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11908079A
Other languages
Japanese (ja)
Inventor
Nobuhiko Susa
Hiroshi Kanbe
Hiroaki Ando
Yoshiharu Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11908079A priority Critical patent/JPS5643781A/en
Publication of JPS5643781A publication Critical patent/JPS5643781A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To expand the photodetecting sensitibity near the infrared range by forming the first and second conduction type semiconductor layers on the substrate of a conductive type in such a manner as to be different thereform with InxGa1-xAs composing the second layer. CONSTITUTION:A semiconductor layer 13 of a P type InP is formed on a semiconductor substrate 11 on an N<+> type InP to form a p-n injunction 12. A semiconductor layer 14 of a P type or a P<+> type InxGa1-xAs (0.50<=X<=0.56) is formed on the semiconductor layer 13. The semiconductor layer 13 has a carrier density of 3X 10<15>-4X10<16> atm/cm<3> and a thickness of more than 0.9-8.4mum. The semiconductor layer 11 is made higher by one to three figures in the carrier density than that of the semiconductor layer 13 and electrodes 15 and 16 are provided on the laminate thereof. This prevents the generation of a positive hole in the semiconductor layer 13 otherwise doubling electrons eliminating dark current while the semiconductor layer 14 helps expand the photodetecting range near infrared rays range.
JP11908079A 1979-09-17 1979-09-17 Semiconductor photodetecting element Pending JPS5643781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11908079A JPS5643781A (en) 1979-09-17 1979-09-17 Semiconductor photodetecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11908079A JPS5643781A (en) 1979-09-17 1979-09-17 Semiconductor photodetecting element

Publications (1)

Publication Number Publication Date
JPS5643781A true JPS5643781A (en) 1981-04-22

Family

ID=14752375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11908079A Pending JPS5643781A (en) 1979-09-17 1979-09-17 Semiconductor photodetecting element

Country Status (1)

Country Link
JP (1) JPS5643781A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582077A (en) * 1981-06-19 1983-01-07 ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド Semiconductor device
US4906583A (en) * 1984-12-22 1990-03-06 Fujitsu Limited Making a semiconductor photodetector
US5361151A (en) * 1990-08-09 1994-11-01 Seiko Epson Corporation Reflection-type liquid crystal device with polarization of output light perpendicular to that of input light
JPH08178330A (en) * 1994-06-02 1996-07-12 Lg Electronics Inc Deodorizing apparatus and deodorizing member manufacturing method using high temperature catalyst

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397386A (en) * 1977-02-07 1978-08-25 Hitachi Ltd Avalanche photo diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397386A (en) * 1977-02-07 1978-08-25 Hitachi Ltd Avalanche photo diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582077A (en) * 1981-06-19 1983-01-07 ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド Semiconductor device
US4906583A (en) * 1984-12-22 1990-03-06 Fujitsu Limited Making a semiconductor photodetector
US5361151A (en) * 1990-08-09 1994-11-01 Seiko Epson Corporation Reflection-type liquid crystal device with polarization of output light perpendicular to that of input light
USRE35799E (en) * 1990-08-09 1998-05-19 Seiko Epson Corporation Reflection-type liquid crystal device with polarization of output light perpendicular to that of input light
JPH08178330A (en) * 1994-06-02 1996-07-12 Lg Electronics Inc Deodorizing apparatus and deodorizing member manufacturing method using high temperature catalyst

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