JPS5643783A - Light emitting diode for optical communication - Google Patents

Light emitting diode for optical communication

Info

Publication number
JPS5643783A
JPS5643783A JP11876979A JP11876979A JPS5643783A JP S5643783 A JPS5643783 A JP S5643783A JP 11876979 A JP11876979 A JP 11876979A JP 11876979 A JP11876979 A JP 11876979A JP S5643783 A JPS5643783 A JP S5643783A
Authority
JP
Japan
Prior art keywords
region
type
light emitting
light guiding
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11876979A
Other languages
Japanese (ja)
Inventor
Yutaka Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11876979A priority Critical patent/JPS5643783A/en
Publication of JPS5643783A publication Critical patent/JPS5643783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE:To improve the efficiency of combination with an optical fiber by providing a high concentration diffused region of impurity at a part of a region facing a light guiding window adjacent to a light emitting region in such a manner as to be identical in the type to the light guiding region. CONSTITUTION:Prior to cutting of a light diode element into a chip, with an electrode 1 for n type substrate layer as mask, an n type impurity, such as Te, is diffused from a light guiding window 10 to provide an n type diffused region 9 into an n type Ga0.65Al0.35 layer 3. The resistance of the region 9 becomes lower than the surrounding region sufficiently to constrict the current thereby improving the combination efficiency with a small diameter.
JP11876979A 1979-09-18 1979-09-18 Light emitting diode for optical communication Pending JPS5643783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11876979A JPS5643783A (en) 1979-09-18 1979-09-18 Light emitting diode for optical communication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11876979A JPS5643783A (en) 1979-09-18 1979-09-18 Light emitting diode for optical communication

Publications (1)

Publication Number Publication Date
JPS5643783A true JPS5643783A (en) 1981-04-22

Family

ID=14744606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11876979A Pending JPS5643783A (en) 1979-09-18 1979-09-18 Light emitting diode for optical communication

Country Status (1)

Country Link
JP (1) JPS5643783A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137271A (en) * 1982-02-10 1983-08-15 Toshiba Corp Light-emitting diode
US4989051A (en) * 1990-02-13 1991-01-29 The Univ. Of Delaware Bi-directional, feed through emitter-detector for optical fiber transmission lines
CN117810330A (en) * 2023-12-29 2024-04-02 江苏宜兴德融科技有限公司 LED structure, manufacturing method thereof and corresponding LED chip

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137271A (en) * 1982-02-10 1983-08-15 Toshiba Corp Light-emitting diode
US4989051A (en) * 1990-02-13 1991-01-29 The Univ. Of Delaware Bi-directional, feed through emitter-detector for optical fiber transmission lines
WO1991012633A1 (en) * 1990-02-13 1991-08-22 E.I. Du Pont De Nemours And Company Bi-directional, feed through emitter-detector for optical fiber transmission lines
CN117810330A (en) * 2023-12-29 2024-04-02 江苏宜兴德融科技有限公司 LED structure, manufacturing method thereof and corresponding LED chip

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