JPS5643790A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5643790A JPS5643790A JP11987379A JP11987379A JPS5643790A JP S5643790 A JPS5643790 A JP S5643790A JP 11987379 A JP11987379 A JP 11987379A JP 11987379 A JP11987379 A JP 11987379A JP S5643790 A JPS5643790 A JP S5643790A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- isotropic
- emergence
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To provide a light wave guide tube with an angle of emergence small and isotropic by making thereof contacting an active layer thicker on the light emitting side than others. CONSTITUTION:A groove is formed on an N type GaAs substrate 1 bt chemical etching. A liquid epitaxial is used to form a fist layer 2 of an N type Ga0.7Al0.3As, a second layer 3 of an N type Ga0.9Al0.1As, a third active layer 4 of an undoped type Ga0.95Al0.05As, a forth layer 5 of a P type Ga0.7Al0.3As, and a fifth layer 6 of a P type GaAs on the substrate 1. The second layer 3 is grown thicker in the second layer 3 in the grooved section because of different growing speed between the flat section and the grooved section while the remaining layers are almost even in thickness. An SiO2 layer 7, a P side electrode 8 and an N-side electrode 9 are provided on the surface of the wafer thus formed. This enables oscillation at a relatively low threshold while providing an angle of emergence isotropic and small- unavailable by a normal double hetero construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11987379A JPS5643790A (en) | 1979-09-18 | 1979-09-18 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11987379A JPS5643790A (en) | 1979-09-18 | 1979-09-18 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5643790A true JPS5643790A (en) | 1981-04-22 |
Family
ID=14772358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11987379A Pending JPS5643790A (en) | 1979-09-18 | 1979-09-18 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5643790A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63141685A (en) * | 1986-03-25 | 1988-06-14 | 古野電気株式会社 | Bearing washer |
-
1979
- 1979-09-18 JP JP11987379A patent/JPS5643790A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63141685A (en) * | 1986-03-25 | 1988-06-14 | 古野電気株式会社 | Bearing washer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5681994A (en) | Field effect type semiconductor laser and manufacture thereof | |
| JPS5743487A (en) | Semiconductor laser | |
| JPS6432694A (en) | Manufacture of semiconductor device in which laser diode and photodiode with expanded light receiving plane are unified | |
| JPS5643790A (en) | Semiconductor laser | |
| JPS6417487A (en) | Semiconductor laser device | |
| JPS5673487A (en) | Semiconductor laser and its manufacture | |
| JPS5618484A (en) | Manufacture of semiconductor laser | |
| JPS57162382A (en) | Semiconductor laser | |
| JPS55158689A (en) | Semiconductor light emitting device and manufacture thereof | |
| JPS5691490A (en) | Semiconductor laser element | |
| JPS5673485A (en) | Semiconductor luminous element | |
| JPS56100488A (en) | Semiconductor laser device | |
| JPS5676588A (en) | Manufacture of semiconductor laser | |
| JPS55153388A (en) | Semiconductor laser device for oscillating multiple wavelength | |
| JPS55125690A (en) | Semiconductor laser | |
| JPS5489490A (en) | Compound semiconductor laser device | |
| JPS5596694A (en) | Semiconductor laser device and method of fabricating the same | |
| JPS57139986A (en) | Manufacure of semiconductor laser | |
| JPS57136385A (en) | Manufacture of semiconductor laser | |
| JPS5780789A (en) | Semiconductor laser device | |
| JPS6433987A (en) | Semiconductor laser device | |
| JPS54107283A (en) | Formation method of reflection face of semiconductor laser crystal | |
| JPS6482525A (en) | Manufacture of semiconductor device | |
| JPS6449292A (en) | Semiconductor light-emitting device | |
| JPS6482686A (en) | Semiconductor laser |