JPS5645086A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS5645086A
JPS5645086A JP12063879A JP12063879A JPS5645086A JP S5645086 A JPS5645086 A JP S5645086A JP 12063879 A JP12063879 A JP 12063879A JP 12063879 A JP12063879 A JP 12063879A JP S5645086 A JPS5645086 A JP S5645086A
Authority
JP
Japan
Prior art keywords
region
light
membrane
pad
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12063879A
Other languages
Japanese (ja)
Other versions
JPS6244706B2 (en
Inventor
Shigeru Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12063879A priority Critical patent/JPS5645086A/en
Publication of JPS5645086A publication Critical patent/JPS5645086A/en
Publication of JPS6244706B2 publication Critical patent/JPS6244706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain a low-noise sensor, by covering other portions of a photosensor surface than light-receiving section and bonding section with a light-shielding membrane, and further by providing in the surrounding area of the bonding pad a semiconductor region which absorb carrier on a semiconductor substrate surface. CONSTITUTION:A photodiode is prepared by dispersing formation of an N<+> type region 6 on a P type semiconductor substrate 1, and in the surrounding area of an Al bonding pad 4 to be formed later, a Q<+> type region 7 is also formed for absorption of carrier on the surface of the substrate 1. And then, the entire surface is covered by a laminated body of an SiO2 membrane 8 and a layer-insulating SiO2 membrane 9, provided with a light-receiving opening by being positioned on the region 6, and the region 6 is connected to an Al wiring membrane 5 through the pad 4. In such a constitution, a light-shielding membrane 2 composed of Al is attached onto the exposed surface other than the opening section 3 and the pad 4, so that this and the region 7 can eliminate all the unnecessary carriers causing noise.
JP12063879A 1979-09-21 1979-09-21 Photosensor Granted JPS5645086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12063879A JPS5645086A (en) 1979-09-21 1979-09-21 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12063879A JPS5645086A (en) 1979-09-21 1979-09-21 Photosensor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61197149A Division JPS6276570A (en) 1986-08-25 1986-08-25 Photosensor

Publications (2)

Publication Number Publication Date
JPS5645086A true JPS5645086A (en) 1981-04-24
JPS6244706B2 JPS6244706B2 (en) 1987-09-22

Family

ID=14791165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12063879A Granted JPS5645086A (en) 1979-09-21 1979-09-21 Photosensor

Country Status (1)

Country Link
JP (1) JPS5645086A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010671A (en) * 1983-06-30 1985-01-19 Toshiba Corp Solid state image sensor
JPS61127165A (en) * 1984-11-24 1986-06-14 Sharp Corp Semiconductor device
KR101016121B1 (en) 2008-10-29 2011-02-17 경북대학교 산학협력단 Strip optical sensor and radiation 2D position information and energy detection device
JP2021097056A (en) * 2019-12-13 2021-06-24 コーデンシ株式会社 Semiconductor integrated circuit device and optical sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116779A (en) * 1989-09-28 1991-05-17 Nec Ic Microcomput Syst Ltd Integrated circuit device with built-in photosensitive element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010671A (en) * 1983-06-30 1985-01-19 Toshiba Corp Solid state image sensor
JPS61127165A (en) * 1984-11-24 1986-06-14 Sharp Corp Semiconductor device
KR101016121B1 (en) 2008-10-29 2011-02-17 경북대학교 산학협력단 Strip optical sensor and radiation 2D position information and energy detection device
JP2021097056A (en) * 2019-12-13 2021-06-24 コーデンシ株式会社 Semiconductor integrated circuit device and optical sensor

Also Published As

Publication number Publication date
JPS6244706B2 (en) 1987-09-22

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