JPS5654036A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5654036A
JPS5654036A JP13065279A JP13065279A JPS5654036A JP S5654036 A JPS5654036 A JP S5654036A JP 13065279 A JP13065279 A JP 13065279A JP 13065279 A JP13065279 A JP 13065279A JP S5654036 A JPS5654036 A JP S5654036A
Authority
JP
Japan
Prior art keywords
film
poly
substrate
impurities
rediffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13065279A
Other languages
Japanese (ja)
Inventor
Katsuhiro Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13065279A priority Critical patent/JPS5654036A/en
Publication of JPS5654036A publication Critical patent/JPS5654036A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To conduct diffusion without rediffusion from the semiconductor substrate while changing the quality of a poly Si film and utilize the film as internal wiring by a method wherein laser rays having high output and high energy are irradiated to the poly Si film containing impurities. CONSTITUTION:An SiO2 film 2 on a P type Si substrate 1 is opened, and a poly Si film 3 containing impurities 4 is deposited at the thickness of about several thousand Angstrom . When irradiating the laser rays of several joule/cm<2>, temperature of the poly Si reaches about 1,200 deg.C, the impurities diffuse into the substrate, and a layer 6 is formed. The film 4 often melts, and recrystallizes in an opening portion and is changed into a monocrystal Si film, crystal grains greatly grow portions except the opening portion, impurities caught by crystal grain baundaries are taken into the crystal grains, and resistivity remarkably lowers. Rediffusion from the substrate side is not generated at all because a temperature of the Si substrate hardly rises at that time. Thus, the poly Si film used as a diffusion source can further be utilized as an electrode and internal wiring.
JP13065279A 1979-10-08 1979-10-08 Manufacture of semiconductor device Pending JPS5654036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13065279A JPS5654036A (en) 1979-10-08 1979-10-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13065279A JPS5654036A (en) 1979-10-08 1979-10-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5654036A true JPS5654036A (en) 1981-05-13

Family

ID=15039364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13065279A Pending JPS5654036A (en) 1979-10-08 1979-10-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5654036A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4947630A (en) * 1972-06-05 1974-05-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4947630A (en) * 1972-06-05 1974-05-08

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