JPS558011A - Semi-conductor device manufacturing method - Google Patents

Semi-conductor device manufacturing method

Info

Publication number
JPS558011A
JPS558011A JP7939478A JP7939478A JPS558011A JP S558011 A JPS558011 A JP S558011A JP 7939478 A JP7939478 A JP 7939478A JP 7939478 A JP7939478 A JP 7939478A JP S558011 A JPS558011 A JP S558011A
Authority
JP
Japan
Prior art keywords
layer
dispersed
impurities
dispersion
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7939478A
Other languages
Japanese (ja)
Inventor
Kazuo Yamanaka
Kenji Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7939478A priority Critical patent/JPS558011A/en
Publication of JPS558011A publication Critical patent/JPS558011A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To achieve, with dispersion of impurities at only one time, formation of two layers with regions of the same electroconduction type but different impurities concentrations.
CONSTITUTION: An N-epi-layer 2 is provided on an N+ Si base plate 1, and a window is opened on SiO2 3. P is selectively driven into rear surface of the N+ base plate 1, to prepare an N++ layer 5 and As is also selectively driven to prepare an N++ layer 6. When these are tightly enclosed in a quartz vacuum container and heated, P and As are evaporated and dispersed into the layer 2 through the window 4. P is dispersed quicker than As to form an N layer 11, and As is dispersed onto an N layer 11 to form an N+ layer 12. It is possible, in this manner, to provide several kinds of impurity sources of different dispersion constants but of the same electroconduction type impurities, whereby it is possible to form a number of dispersion layers of different impurity concentrations in only one dispersion process. Surface concentration of impurities to be dispersed can be easily and accurately controlled because it is possible to control surface concentration, to be dispersed on the base plate to be treated, by a ratio between exposed surface area of the base plate to be treated and surface area of dispersion impurities source.
COPYRIGHT: (C)1980,JPO&Japio
JP7939478A 1978-06-30 1978-06-30 Semi-conductor device manufacturing method Pending JPS558011A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7939478A JPS558011A (en) 1978-06-30 1978-06-30 Semi-conductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7939478A JPS558011A (en) 1978-06-30 1978-06-30 Semi-conductor device manufacturing method

Publications (1)

Publication Number Publication Date
JPS558011A true JPS558011A (en) 1980-01-21

Family

ID=13688634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7939478A Pending JPS558011A (en) 1978-06-30 1978-06-30 Semi-conductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS558011A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6121115A (en) * 1984-07-09 1986-01-29 Chisso Corp Automobile interior part made of polypropylene
JPS6455874A (en) * 1987-08-27 1989-03-02 Matsushita Electronics Corp Variable semiconductor capacitor
US4946898A (en) * 1987-11-11 1990-08-07 Idemitsu Petrochemical Co., Ltd. Propylene polymer composition
EP0700943A1 (en) 1994-08-18 1996-03-13 Chisso Corporation A highly stiff propylene-ethylene block copolymer composition and a process for producing the same
US5854355A (en) * 1995-04-24 1998-12-29 Chisso Corporation Continuous process for preparation of highly rigid propylene-ethylene block copolymers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52129275A (en) * 1976-04-21 1977-10-29 Fujitsu Ltd Impurity diffusion method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52129275A (en) * 1976-04-21 1977-10-29 Fujitsu Ltd Impurity diffusion method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6121115A (en) * 1984-07-09 1986-01-29 Chisso Corp Automobile interior part made of polypropylene
JPS6455874A (en) * 1987-08-27 1989-03-02 Matsushita Electronics Corp Variable semiconductor capacitor
US4946898A (en) * 1987-11-11 1990-08-07 Idemitsu Petrochemical Co., Ltd. Propylene polymer composition
EP0700943A1 (en) 1994-08-18 1996-03-13 Chisso Corporation A highly stiff propylene-ethylene block copolymer composition and a process for producing the same
US5672658A (en) * 1994-08-18 1997-09-30 Chisso Corporation Highly stiff propylene-ethylene block copolymer composition and a process for producing the same
US5854355A (en) * 1995-04-24 1998-12-29 Chisso Corporation Continuous process for preparation of highly rigid propylene-ethylene block copolymers

Similar Documents

Publication Publication Date Title
JPS558011A (en) Semi-conductor device manufacturing method
DE2960880D1 (en) Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration
JPS57197848A (en) Semiconductor device and manufacture thereof
JPS57194525A (en) Manufacture of semiconductor device
JPS5475273A (en) Manufacture of semiconductor device
JPS56105652A (en) Manufacture of semiconductor device
JPS6445118A (en) Solid-phase diffusion of boron
JPS53129981A (en) Production of semiconductor device
JPS55158679A (en) Manufacture of solar cell
JPS55102269A (en) Method of fabricating semiconductor device
JPS56134774A (en) Manufacture of semiconductor device
JPS5666056A (en) Manufacture of semiconductor device
JPS54103671A (en) Production of semiconductor device
JPS559477A (en) Method of making semiconductor device
JPS55121635A (en) Diffusing method for impurity in semiconductor apparatus
JPS51111057A (en) Crystal growing device
JPS5666030A (en) Manufacture of semiconductor device
JPS5740939A (en) P-n junction formation
JPS57194524A (en) Manufacture of semiconductor device
JPS5323266A (en) Manufacture of fluorescent screen
JPS52154344A (en) Impurity diffusion method
JPS6417425A (en) Manufacture of semiconductor device
JPS5368569A (en) Rough surfaced substrate for impurity diffusion
JPS5662366A (en) Manufacturing of smiconductor
JPS55120156A (en) Method of fabricating semiconductor device