JPS5654068A - Photoiginition-type semiconductor control rectifier - Google Patents

Photoiginition-type semiconductor control rectifier

Info

Publication number
JPS5654068A
JPS5654068A JP12984679A JP12984679A JPS5654068A JP S5654068 A JPS5654068 A JP S5654068A JP 12984679 A JP12984679 A JP 12984679A JP 12984679 A JP12984679 A JP 12984679A JP S5654068 A JPS5654068 A JP S5654068A
Authority
JP
Japan
Prior art keywords
layer
light
time
ring
life
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12984679A
Other languages
Japanese (ja)
Inventor
Tsuneo Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12984679A priority Critical patent/JPS5654068A/en
Publication of JPS5654068A publication Critical patent/JPS5654068A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To thoroughly reduce the minimum trigger quantity of light by a mechanism wherein life-time killer atoms are prevented from being contained in a semiconductor layer located below a light receiving surface forming a photo-trigger thyrister, and the life-time of the layer is kept larger than those of others. CONSTITUTION:A P type emitter layer 2 is formed on the reverse side of an N type base 1 and a P type base layer 3 on the surface thereof; a ring and a similar ring- shaped N type emitter region 4 surrounding the ring are provided in the layer 3; an anode electrode 5 is formed on the reverse side of the layer 2, and a similar ring- shaped cathode electrode 6 on an annular region 4 to incide lights 7 on this side. With this construction, width R of the internal region 4 is enough to widen for reducing the minimum trigger quantity of light, while du/dt withstand value becoming small, and diffusion of Au for shortening the turn-on period of time increases the quantity of light required. Therefore, the life-time only is kept long without diffusing Au onthe semiconductor layer under the light receiving surface.
JP12984679A 1979-10-11 1979-10-11 Photoiginition-type semiconductor control rectifier Pending JPS5654068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12984679A JPS5654068A (en) 1979-10-11 1979-10-11 Photoiginition-type semiconductor control rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12984679A JPS5654068A (en) 1979-10-11 1979-10-11 Photoiginition-type semiconductor control rectifier

Publications (1)

Publication Number Publication Date
JPS5654068A true JPS5654068A (en) 1981-05-13

Family

ID=15019676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12984679A Pending JPS5654068A (en) 1979-10-11 1979-10-11 Photoiginition-type semiconductor control rectifier

Country Status (1)

Country Link
JP (1) JPS5654068A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935875A (en) * 1972-08-04 1974-04-03
JPS53112683A (en) * 1977-03-11 1978-10-02 Siemens Ag Semiconductor
JPS54128686A (en) * 1978-03-29 1979-10-05 Fuji Electric Co Ltd Photo trigger thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935875A (en) * 1972-08-04 1974-04-03
JPS53112683A (en) * 1977-03-11 1978-10-02 Siemens Ag Semiconductor
JPS54128686A (en) * 1978-03-29 1979-10-05 Fuji Electric Co Ltd Photo trigger thyristor

Similar Documents

Publication Publication Date Title
FR2415370A1 (en) SEMICONDUCTOR DEVICE EQUIPPED WITH A HIGH VOLTAGE BIPOLAR PLANAR SEMICONDUCTOR COMPONENT
JPS57139976A (en) Light emitting/receiving device
JPS5610967A (en) Semiconductor device
JPS5610970A (en) Thyristor
JPS5596677A (en) Semiconductor switching element and method of controlling the same
JPS52124885A (en) Semiconductor light emitting device
JPS5654068A (en) Photoiginition-type semiconductor control rectifier
GB1366845A (en) Integrated thyristor semiconductor arrangements
JPS5527618A (en) Planar diode
JPS5681970A (en) Semiconductor switching device
JPS54112182A (en) Semiconductor device
JPS57173974A (en) Semiconductor device
JPS57136365A (en) Transistor
JPS5366384A (en) Thyristor
JPS54124983A (en) Semiconductor device
JPS5595363A (en) Thyristor
JPS562667A (en) Semiconductor device and manufacture thereof
JPS57207380A (en) Zener diode
JPS5780769A (en) Semiconductor device
JPS5645073A (en) Reverse conduction thyrister
JPS5516541A (en) Reverse-conducting gate turn-off thyristor circuit
JPS5440576A (en) Manufacture of semiconductor element
JPS5651868A (en) Semiconductor device
JPS57136364A (en) Transistor
JPS56148866A (en) Manufacture of semiconductor element