JPS5656025A - Elastic surface wave resonator - Google Patents
Elastic surface wave resonatorInfo
- Publication number
- JPS5656025A JPS5656025A JP13132379A JP13132379A JPS5656025A JP S5656025 A JPS5656025 A JP S5656025A JP 13132379 A JP13132379 A JP 13132379A JP 13132379 A JP13132379 A JP 13132379A JP S5656025 A JPS5656025 A JP S5656025A
- Authority
- JP
- Japan
- Prior art keywords
- elastic surface
- substrate
- wave resonator
- surface wave
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:To obtain an elastic surface wave resonator of high Q by providing many grooves, reflecting elastic surface waves, to a silicon film on a piezoelectric substrate. CONSTITUTION:In lithium tantalate substrate 5 high in coupling coefficient, interdigital electrode 6 of an aluminum film is formed by being etched. Next, silicon oxide film 7 is formed on the entire surface of substrate 5 in the CVD method. On the surface of silicon oxide film 7, grooves 8 of 1mum in depth are plasma-etched in stripes of 8mum width. The thus obtained resonator has Q between about 10,000 and 30,000 and its manufacture process can employ the technique used in the mass- production line of IC at present. Consequently, excellent resonators can be obtained by the manufacture process suitable for mass-production even when lithium tantalate large in coupling coefficient is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13132379A JPS5656025A (en) | 1979-10-13 | 1979-10-13 | Elastic surface wave resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13132379A JPS5656025A (en) | 1979-10-13 | 1979-10-13 | Elastic surface wave resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5656025A true JPS5656025A (en) | 1981-05-16 |
| JPS6346605B2 JPS6346605B2 (en) | 1988-09-16 |
Family
ID=15055259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13132379A Granted JPS5656025A (en) | 1979-10-13 | 1979-10-13 | Elastic surface wave resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5656025A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63294010A (en) * | 1987-05-26 | 1988-11-30 | Clarion Co Ltd | Surface acoustic wave resonator |
| JPS63294008A (en) * | 1987-05-26 | 1988-11-30 | Clarion Co Ltd | Surface acoustic wave device |
| WO2012029354A1 (en) * | 2010-08-31 | 2012-03-08 | 太陽誘電株式会社 | Acoustic wave device |
| JP2016225743A (en) * | 2015-05-28 | 2016-12-28 | 株式会社デンソー | Surface acoustic wave element and physical quantity sensor employing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5585121A (en) * | 1978-12-22 | 1980-06-26 | Matsushita Electric Ind Co Ltd | Surface acoustic wave element |
-
1979
- 1979-10-13 JP JP13132379A patent/JPS5656025A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5585121A (en) * | 1978-12-22 | 1980-06-26 | Matsushita Electric Ind Co Ltd | Surface acoustic wave element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63294010A (en) * | 1987-05-26 | 1988-11-30 | Clarion Co Ltd | Surface acoustic wave resonator |
| JPS63294008A (en) * | 1987-05-26 | 1988-11-30 | Clarion Co Ltd | Surface acoustic wave device |
| WO2012029354A1 (en) * | 2010-08-31 | 2012-03-08 | 太陽誘電株式会社 | Acoustic wave device |
| US8664835B2 (en) | 2010-08-31 | 2014-03-04 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
| JP2016225743A (en) * | 2015-05-28 | 2016-12-28 | 株式会社デンソー | Surface acoustic wave element and physical quantity sensor employing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6346605B2 (en) | 1988-09-16 |
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