JPS5659625A - Manufacture of polycrystal of compound semiconductor mixed crystal - Google Patents

Manufacture of polycrystal of compound semiconductor mixed crystal

Info

Publication number: JPS5659625A
Authority: JP; Japan
Prior art keywords: polycrystal; compound semiconductor; mixed crystal; temp; manufacture
Prior art date: 1979-10-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP13416479A

Other languages

English (en)

Japanese (ja)

Other versions

JPS612636B2 (2

Inventor

Kazuhiro Ito

Kazuhiro Kurata

Yuichi Ono

Mitsuhiro Mori

Masahiko Kawada

Hitoshi Nakamura

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-10-19

Filing date

1979-10-19

Publication date

1981-05-23

1979-10-19 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1979-10-19 Priority to JP13416479A priority Critical patent/JPS5659625A/ja

1981-05-23 Publication of JPS5659625A publication Critical patent/JPS5659625A/ja

1986-01-27 Publication of JPS612636B2 publication Critical patent/JPS612636B2/ja

Status Granted legal-status Critical Current

Links

150000001875 compounds Chemical class 0.000 title abstract 4
239000004065 semiconductor Substances 0.000 title abstract 4
239000013078 crystal Substances 0.000 title abstract 3
238000004519 manufacturing process Methods 0.000 title abstract 2
239000003708 ampul Substances 0.000 abstract 3
239000000203 mixture Substances 0.000 abstract 2
239000007858 starting material Substances 0.000 abstract 2
230000008021 deposition Effects 0.000 abstract 1
238000010438 heat treatment Methods 0.000 abstract 1
239000000155 melt Substances 0.000 abstract 1
239000010453 quartz Substances 0.000 abstract 1
238000005204 segregation Methods 0.000 abstract 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

JP13416479A 1979-10-19 1979-10-19 Manufacture of polycrystal of compound semiconductor mixed crystal Granted JPS5659625A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP13416479A JPS5659625A (en)	1979-10-19	1979-10-19	Manufacture of polycrystal of compound semiconductor mixed crystal

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP13416479A JPS5659625A (en)	1979-10-19	1979-10-19	Manufacture of polycrystal of compound semiconductor mixed crystal

Publications (2)

Publication Number	Publication Date
JPS5659625A true JPS5659625A (en)	1981-05-23
JPS612636B2 JPS612636B2 (2)	1986-01-27

Family

ID=15121942

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP13416479A Granted JPS5659625A (en)	1979-10-19	1979-10-19	Manufacture of polycrystal of compound semiconductor mixed crystal

Country Status (1)

Country	Link
JP (1)	JPS5659625A (2)

1979
- 1979-10-19 JP JP13416479A patent/JPS5659625A/ja active Granted

Also Published As

Publication number	Publication date
JPS612636B2 (2)	1986-01-27

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