JPS5660310A - Film thickness control device - Google Patents

Film thickness control device

Info

Publication number: JPS5660310A
Authority: JP; Japan
Prior art keywords: thin film; dielectric; light; film; reflection factor
Prior art date: 1979-10-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP13685479A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6219683B2 (de

Inventor

Yoichi Osawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-10-23

Filing date

1979-10-23

Publication date

1981-05-25

1979-10-23 Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp

1979-10-23 Priority to JP13685479A priority Critical patent/JPS5660310A/ja

1981-05-25 Publication of JPS5660310A publication Critical patent/JPS5660310A/ja

1987-04-30 Publication of JPS6219683B2 publication Critical patent/JPS6219683B2/ja

Status Granted legal-status Critical Current

Links

239000010409 thin film Substances 0.000 abstract 6
239000010408 film Substances 0.000 abstract 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
239000000835 fiber Substances 0.000 abstract 2
238000002161 passivation Methods 0.000 abstract 2
229910052681 coesite Inorganic materials 0.000 abstract 1
229910052906 cristobalite Inorganic materials 0.000 abstract 1
238000000034 method Methods 0.000 abstract 1
239000004065 semiconductor Substances 0.000 abstract 1
239000000377 silicon dioxide Substances 0.000 abstract 1
229910052682 stishovite Inorganic materials 0.000 abstract 1
229910052905 tridymite Inorganic materials 0.000 abstract 1

Landscapes

Length Measuring Devices By Optical Means (AREA)

JP13685479A 1979-10-23 1979-10-23 Film thickness control device Granted JPS5660310A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP13685479A JPS5660310A (en)	1979-10-23	1979-10-23	Film thickness control device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP13685479A JPS5660310A (en)	1979-10-23	1979-10-23	Film thickness control device

Publications (2)

Publication Number	Publication Date
JPS5660310A true JPS5660310A (en)	1981-05-25
JPS6219683B2 JPS6219683B2 (de)	1987-04-30

Family

ID=15185051

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP13685479A Granted JPS5660310A (en)	1979-10-23	1979-10-23	Film thickness control device

Country Status (1)

Country	Link
JP (1)	JPS5660310A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0693403A (ja) *	1992-09-11	1994-04-05	Nippon Steel Corp	被膜形成のための条件決定方法

1979
- 1979-10-23 JP JP13685479A patent/JPS5660310A/ja active Granted

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0693403A (ja) *	1992-09-11	1994-04-05	Nippon Steel Corp	被膜形成のための条件決定方法

Also Published As

Publication number	Publication date
JPS6219683B2 (de)	1987-04-30

Similar Documents

Publication	Publication Date	Title
JPS5660310A (en)	1981-05-25	Film thickness control device
JPS57132114A (en)	1982-08-16	Dividing method of light flux
JPS642004A (en)	1989-01-06	Very narrow band optical multi-layered film
JPS5548993A (en)	1980-04-08	Semiconductor laser device
JPS5630117A (en)	1981-03-26	Liquid crystal display device
FI913381A0 (fi)	1991-07-12	Halvledarlaserfoerstaerkare.
US3804487A (en)	1974-04-16	Optical input coupler for a light guide
JPS5727213A (en)	1982-02-13	Dielectric multilayer film mirror
JPS5745501A (en)	1982-03-15	Reflection preventing film of metal
JPS53128288A (en)	1978-11-09	Semiconductor laser element and production of the same
JPS5341976A (en)	1978-04-15	Measuring method of thickness of semiconducjtor wafer
JPS6449282A (en)	1989-02-23	Integrated circuit device with built-in photodiode
JPS57173992A (en)	1982-10-26	Coupling device for semiconductor laser to optical fiber
JPS5473062A (en)	1979-06-12	Thin-film mirror type optical branch line
JPS54161349A (en)	1979-12-20	Three-dimensional cross type waveguide passage
JPS5376779A (en)	1978-07-07	Semiconductor laser device
JPS53110541A (en)	1978-09-27	Half mirror
CA2173564A1 (en)	1996-10-06	Method of and Device for Measuring the Refractive Index of Wafers of Vitreous Material
JPS5511342A (en)	1980-01-26	Laser diode single mode oscillation device
JPS52153453A (en)	1977-12-20	Optical fiber
JPS5779624A (en)	1982-05-18	Manufacture of semiconductor device
JPS56110287A (en)	1981-09-01	Semiconductor laser device
JPS57170585A (en)	1982-10-20	Semiconductor laser device
JPS57147004A (en)	1982-09-10	Method for optical measurement of semiconductor plate dimension
JPS537252A (en)	1978-01-23	Multi-layer reflection preventive film